2SD2029 Datasheet PDF - SavantIC

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2SD2029
SavantIC

Part Number 2SD2029
Description SILICON POWER TRANSISTOR
Page 4 Pages


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SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD2029
DESCRIPTION
www.dat·aWshiethet4TuO.co-3mPL package
·Complement to type 2SB1347
·Wide area of safe operation
·High transition frequency
APPLICATIONS
·Optimum for the output stage of a
Hi-Fi audio amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PL) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
Collector-base voltage
Collector-emitter voltage
Open emitter
Open base
VEBO
IC
ICM
PC
Emitter-base voltage
Open collector
Collector current
Collector current-peak
Collector power dissipation
Ta=25
TC=25
Tj Junction temperature
Tstg Storage temperature
VALUE
160
160
5
12
20
3.5
120
150
-55~150
UNIT
V
V
V
A
A
W



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SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD2029
CHARACTERISTICS
Tj=25 unless otherwise specified
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SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0
VCEsat Collector-emitter saturation voltage IC=8A ;IB=0.8A
VBE
ICBO
IEBO
hFE-1
Base-emitter voltage
Collector cut-off current
Emitter cut-off current
DC current gain
IC=8A ; VCE=5V
VCB=160V; IE=0
VEB=3V; IC=0
IC=20mA ; VCE=5V
hFE-2
DC current gain
IC=1A ; VCE=5V
hFE-3
fT
COB
DC current gain
Transition frequency
Collector output capacitance
IC=8A ; VCE=5V
IC=0.5A ; VCE=5V;f=1MHz
IE=0;f=1MHz;VCB=10V
MIN TYP. MAX UNIT
160 V
2.0 V
1.8 V
50 µA
50 µA
20
60 200
20
20 MHz
210 pF
hFE-2 classifications
QS
P
60-120
80-160 100-200
2



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SavantIC Semiconductor
Silicon NPN Power Transistors
PACKAGE OUTLINE
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Product Specification
2SD2029
Fig.2 Outline dimensions (unindicated tolerance:±0.50mm)
3



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SavantIC Semiconductor
Silicon NPN Power Transistors
www.datasheet4u.com
Product Specification
2SD2029
4



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