2SD2029 Datasheet PDF - Panasonic Semiconductor

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2SD2029
Panasonic Semiconductor

Part Number 2SD2029
Description Silicon NPN triple diffusion planar type(For high power amplification)
Page 3 Pages


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Power Transistors
2SD2029
Silicon NPN triple diffusion planar type
For high power amplification
Complementary to 2SB1347
s Features
q Satisfactory foward current transfer ratio hFE collector current IC
characteristics
q Wide area of safe operation (ASO)
q High transition frequency fT
q Optimum for the output stage of a HiFi audio amplifier
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
VCBO
VCEO
VEBO
ICP
IC
PC
160
160
5
20
12
120
3.5
Junction temperature
Storage temperature
Tj 150
Tstg –55 to +155
Unit
V
V
V
A
A
W
˚C
˚C
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
ICBO
IEBO
hFE1
hFE2*
hFE3
VBE
VCE(sat)
fT
Cob
VCB = 160V, IE = 0
VEB = 3V, IC = 0
VCE = 5V, IC = 20mA
VCE = 5V, IC = 1A
VCE = 5V, IC = 8A
VCE = 5V, IC = 8A
IC = 8A, IB = 0.8A
VCE = 5V, IC = 0.5A, f = 1MHz
VCB = 10V, IE = 0, f = 1MHz
*hFE2 Rank classification
Rank
Q
S
hFE2 60 to 120 80 to 160
P
100 to 200
20.0±0.5
Unit: mm
φ 3.3±0.2
5.0±0.3
3.0
1.5
2.0±0.3
3.0±0.3
1.0±0.2
5.45±0.3
10.9±0.5
1.5
2.7±0.3
0.6±0.2
123
1:Base
2:Collector
3:Emitter
TOP–3L Package
min typ max Unit
50 µA
50 µA
20
60 200
20
1.8 V
2.0 V
20 MHz
210 pF
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Power Transistors
200
150
(1)
100
PC — Ta
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) Without heat sink
(PC=3.5W)
50
(2) (3)
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
VCE(sat) — IC
10
IC/IB=10
3
TC=100˚C
1
25˚C
–25˚C
0.3
0.1
0.03
0.01
0.003
0.001
0.1
0.3 1 3 10 30
Collector current IC (A)
100
10000
3000
1000
Cob — VCB
IE=0
f=1MHz
TC=25˚C
300
100
30
10
13
10 30 100
Collector to base voltage VCB (V)
IC — VCE
20
IB=800mA 700mA TC=25˚C
600mA
16
500mA
400mA
300mA
12
200mA
8 100mA
2SD2029
IC — VBE
20
VCE=5V
16 25˚C
TC=–25˚C
100˚C
12
8
4
50mA
4
0
0 2 4 6 8 10 12
Collector to emitter voltage VCE (V)
0
0 0.4 0.8 1.2 1.6 2.0 2.4
Base to emitter voltage VBE (V)
10000
3000
1000
hFE — IC
VCE=5V
300
TC=100˚C
100
25˚C
30
–25˚C
10
3
1
0.1 0.3 1 3 10 30 100
Collector current IC (A)
1000
300
100
fT — IC
VCE=5V
f=1MHz
TC=25˚C
30
10
3
1
0.3
0.1
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
Area of safe operation (ASO)
100
30 ICP
10 IC
Non repetitive pulse
TC=25˚C
t=10ms
3 100ms
DC
1
0.3
0.1
0.03
0.01
1 3 10 30 100 300 1000
Collector to emitter voltage VCE (V)
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Power Transistors
10000
1000
Rth(t) — t
Note: Rth was measured at Ta=25˚C and under natural convection.
(1) PT=10V × 0.3A (3W) and without heat sink
(2) PT=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink
100
(1)
10
(2)
1
0.1
10–4
10–3
10–2
10–1
1
10
Time t (s)
102 103
104
2SD2029
3



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