2SD2027 Datasheet PDF - Inchange Semiconductor

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2SD2027
Inchange Semiconductor

Part Number 2SD2027
Description Power Transistor
Page 2 Pages

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INCHANGE Semiconductor
www.DataSheet4U.com
isc Silicon NPN Power Transistor
isc Product Specification
2SD2027
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min)
·Good Linearity of hFE
·Wide Area of Safe Operation
·Complement to Type 2SB1346
APPLICATIONS
·Designed for low frequency and general purpose
amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
i.cnSYMBOL
PARAMETER
VALUE
UNIT
.iscsemVCBO
Collector-Base Voltage
60 V
VCEO Collector-Emitter Voltage
60 V
wwwVEBO
Emitter-Base Voltage
6V
IC Collector Current-Continuous
3A
ICM Collector Current-Peak
Collector Power Dissipation
@Ta=25
PC
Collector Power Dissipation
@TC=25
TJ Junction Temperature
Tstg Storage Temperature
8A
1.75
W
30
150
-55~150
isc Websitewww.iscsemi.cn

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