2SD1761 Datasheet PDF - SavantIC

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2SD1761
SavantIC

Part Number 2SD1761
Description SILICON POWER TRANSISTOR
Page 3 Pages


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SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1761
DESCRIPTION
www.dat·aWshiethet4TuO.co-2m20Fa package
·Low collector saturation voltage
·Complement to type 2SB1187
·Wide safe operating area
APPLICATIONS
·For low frequency power
amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Fig.1 simplified outline (TO-220Fa) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current (DC)
ICM Collector current-Peak
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
Ta=25
VALUE
80
60
5
3
6
30
2
150
-55~150
UNIT
V
V
V
A
A
W



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SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1761
CHARACTERISTICS
Tj=25 unless otherwise specified
www.datasheet4u.com
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=1mA , IB=0
V(BR)CBO Collector-base breakdown voltage
IC=50µA , IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=50µA , IC=0
VCEsat Collector-emitter saturation voltage IC=2A IB=0.2A
VBEsat
Base-emitter saturation voltage
IC=2A IB=0.2A
ICBO Collector cut-off current
VCB=60V IE=0
IEBO Emitter cut-off current
VEB=4V; IC=0
hFE DC current gain
IC=0.5A ; VCE=5V
fT Transition frequency
IC=0.5A ; VCE=5V
Cob Output capacitance
IE=0 ; VCB=10V ,f=1MHz
MIN TYP. MAX UNIT
60 V
80 V
5V
1.0 V
1.5 V
10 µA
10 µA
60 320
8 MHz
90 pF
hFE Classifications
DE
F
60-120 100-200 160-320
2



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SavantIC Semiconductor
Silicon NPN Power Transistors
PACKAGE OUTLINE
www.datasheet4u.com
Product Specification
2SD1761
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3



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