2SD1760 Datasheet PDF - QUANGUANG


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2SD1760
QUANGUANG

Part Number 2SD1760
Description Power Transistor
Page 1 Pages

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SHENZHEN QUANGUANG
SEMICONDUCTOR CO.,LTD
Power Transistor (50V, 3A)
2SD1760 / 2SD1864
!Features
1) Low VCE(sat).
VCE(sat) = 0.5 V (Typ.)
(IC/IB = 2 A / 0.2 A)
2) Complements the 2SB1184 / 2SB1243.
!Structure
Epitaxial planar type
NPN silicon transistor
!External dimensions (Units : mm)
2SD1760
2SD1864
2.5 ±0.2
0 .7 5
0 .9
(1) (2)(3)
2
0 .5 5 ±0 .1
04
1
(1) (2) (3)
2 .54 2 .54
0.5 ±0.1
4
1 .05
0.45 ±0.1
EIAJ : SC-63
(1) Base
(3) E mitte r
!Absolute maximum ratings
! (Ta = 25 C)
30±51 5.10.1
30510 9
C0 .5
2.3 0.1
1.
.
5
9.
2.3±0.2 2.3±0.2
Parameter
Collector-base voltage
Collector-emitter voltage
Symbol
VCBO
VCEO
Limits
60
50
Unit
V
V
(2) Collector
Emitter-base voltage
VEBO
5
Collector current
Collector power
dissipation
2SD1760
2SD1864
IC
PC
3
4.5
15
1
Junction temperature
Tj 150
Storage temperature
Tstg 55~+150
*1 Single pulse, PW = 100ms
2
*2 Printed circuit board, 1.7mm thick, collector copper plating 100mm or larger.
V
A (DC)
A (Pulse) *1
W (Tc =25C)*2
W
C
C
ROHM : AT V
6.8 ±0.2
(1) E mitte r
(2) Collector
(3) Base
204
505
9
0




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