2SD1760 Datasheet PDF - Inchange Semiconductor

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2SD1760
Inchange Semiconductor

Part Number 2SD1760
Description Silicon NPN Power Transistor
Page 3 Pages


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isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD1760
DESCRIPTION
·Low VCE(sat)
·Small and slim package
·Complements the 2SB1184
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Power dissipation
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
60 V
VCEO
Collector-Emitter Voltage
50 V
VEBO
Emitter-Base Voltage
5V
IC Collector Current-Continuous 3 A
PC Collector Power Dissipation
1.5 W
TJ Junction Temperature
Tstg Storage Temperature Range
150
-55~150
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isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD1760
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 200mA
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 50uA; IC= 0
ICBO Collector Cutoff Current
VCB= 40V; IE= 0
IEBO Emitter Cutoff Current
VEB= 4V; IC= 0
hFE DC Current Gain
IC= 0.5A; VCE=5V
COB Output Capacitance
IE= 0; VCB= 10V; f= 1.0MHz
fT Current-Gain—Bandwidth Product IC= 500mA; VCE= 5V
MIN TYP. MAX UNIT
1.0 V
50 V
5V
1.0 μA
1.0 μA
82 390
40 pF
90 MHz
hFE Classifications
PQR
82-180 120-270 180-390
isc websitewww.iscsemi.com
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isc Silicon NPN Power Transistor
Outline Drawing
INCHANGE Semiconductor
2SD1760
isc websitewww.iscsemi.com
3 isc & iscsemi is registered trademark



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