2SD1069 Datasheet PDF - INCHANGE

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2SD1069
INCHANGE

Part Number 2SD1069
Description Silicon NPN Power Transistor
Page 2 Pages


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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD1069
DESCRIPTION
·High Collector Current Capability
·High Collector Power Dissipation Capability
·Built-in Damper Diode
APPLICATIONS
·TV horizontal deflection output applications.
·High voltage switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
300 V
VCEO Collector-Emitter Voltage
150 V
VEBO Emitter-Base Voltage
6V
IC Collector Current-Continuous
7A
ICM Collector Current-Peak
15 A
IBB Base Current-Continuous
Collector Power Dissipation
Ta=25
PC
Collector Power Dissipation
TC=25
Tj Junction Temperature
Tstg Storage Ttemperature Range
2A
1.75
W
40
150
-55~150
isc Websitewww.iscsemi.cn



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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD1069
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; L= 50mH
V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 0.1A; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB=B 0.5A
VBE(sat) Base-Emitter Saturation Voltage
IC= 5A; IB=B 0.5A
ICES Collector Cutoff Current
VCE= 250V; VBE= 0
hFE DC Current Gain
IC= 5A ; VCE= 1.5V
fT Current-Gain—Bandwidth Product IC= 0.2A; VCE= 10V
VECF
C-E Diode Forward Voltage
IF= 6A
tf Fall Time
ICP= 5A; IB1(end)= 0.5A
MIN TYP. MAX UNIT
150 V
300 V
6V
1.5 V
1.5 V
1 mA
10
18 MHz
1.8 V
1.0 μs
isc Websitewww.iscsemi.cn



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