2SC790 Datasheet PDF - Inchange Semiconductor

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2SC790
Inchange Semiconductor

Part Number 2SC790
Description Silicon NPN Power Transistor
Page 2 Pages


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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC790
DESCRIPTION
·Low Collector Saturation Voltage-
: VCE(sat)= 1.4(V)(Max)@ IC= 2A
·DC Current Gain-
: hFE= 40-240 @ IC= 0.5A
·Complement to Type 2SA490
APPLICATIONS
·Designed for power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
50 V
VCEO Collector-Emitter Voltage
40 V
VEBO Emitter-Base Voltage
5V
IC Collector Current-Continuous
3A
IE Emitter Current-Continuous
PC
Total Power Dissipation
@ TC=25
TJ Junction Temperature
Tstg Storage Temperature Range
-3 A
25 W
150
-55~150
isc Websitewww.iscsemi.cn
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC790
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 10mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB=B 0.2A
VBE(on) Base-Emitter On Voltage
IC= 2A; VCE= 2V
ICBO Collector Cutoff Current
VCB= 30V; IE= 0
IEBO Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 0.5A; VCE= 2V
hFE-2
DC Current Gain
IC= 2A; VCE= 2V
fT
Current-Gain—Bandwidth Product
IC= 0.5A; VCE= 2V
COB Collector Output Capacitance
IE= 0; VCB= 10V; f= 1MHz
MIN TYP. MAX UNIT
40 V
5V
1.4 V
1.8 V
10 μA
100 μA
40 240
13
3 MHz
70 pF
‹ hFE-1 Classifications
ROY
40-80 70-140 120-240
isc Websitewww.iscsemi.cn
2
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