2SC5859 Datasheet PDF - Toshiba

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2SC5859
Toshiba

Part Number 2SC5859
Description Horizontal Deflection Output for HDTV / Digital TV / Projection TV
Page 5 Pages


2SC5859 datasheet pdf
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2SC5859
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
2SC5859
HORIZONTAL DEFLECTION OUTPUT FOR
HDTV, DIGITAL TV, PROJECTION TV
Unit: mm
High Voltage
Low Saturation Voltage
High Speed
: VCBO = 1700 V
: VCE (sat) = 3 V (max)
: tf(2) = 0.1 µs (Typ.)
MAXIMUM RATINGS (Tc = 25°C)
CHARACTERISTIC
CollectorBase Voltage
CollectorEmitter Voltage
EmitterBase Voltage
Collector Current
DC
Pulse
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
RATING
1700
750
5
23
46
11.5
210
150
55~150
UNIT
V
V
V
A
A
W
°C
°C
ELECTRICAL CHARACTERISTICS (Tc = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cutoff Current
Emitter Cutoff Current
Collector Emitter Breakdown Voltage
DC Current Gain
CollectorEmitter Saturation Voltage
BaseEmitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Storage Time
Switching Time
Fall Time
Storage Time
Fall Time
ICBO
IEBO
V (BR) CEO
hFE (1)
hFE (2)
hFE (3)
VCE (sat)
VBE (sat)
fT
Cob
tstg(1)
tf(1)
tstg(2)
tf(2)
VCB = 1700 V, IE = 0
VEB = 5 V, IC = 0
IC = 10 mA, IB = 0
VCE = 5 V, IC = 2 A
VCE = 5 V, IC = 8 A
VCE = 5 V, IC = 18 A
IC = 18 A, IB = 4.5 A
IC = 18 A, IB = 4.5 A
VCE = 10 V, IC = 0.1 A
VCB = 10 V, IE = 0, f = 1 MHz
ICP = 8 A , IB1 (end) = 1 A
fH = 32 kHz
ICP = 7.5 A, IB1 (end) = 1 A
fH = 100 kHz
JEDEC
JEITA
TOSHIBA
2-21F2A
Weight: 9.75 g (typ.)
Min Typ. Max UNIT
――
1 mA
― ― 100 µA
750
V
20 55
10 22
4.5
8
――
3
V
1.0 1.5
V
2 MHz
320
pF
4
0.15
µs
1.8
0.1
µs
1 2004-5-18



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20
4.0
16
12
8
IC – VCE
3.0
3.5
2.5
2.0
1.5
1.2
0.4
IB = 0.2 A
4
0.6 0.8
1.0
Common emitter
Tc = 25
0
0 2 4 6 8 10
Collector-emitter voltage VCE (V)
hFE – IC
100
Tc = 100°C
Common emitter
VCE = 5 V
25
25
10
1
0.01 0.1 1 10 100
Collector current IC (A)
30
Common emitter
VCE = 5 V
25
IC – VBE
20
15
Tc = 100°C
25
10
25
5
0
0 0.2 0.4 0.6 0.8 1.0 1.2
Baseemitter voltage VBE (V)
2
2SC5859
2004-5-18



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VCE – IB
10
Common emitter
Tc = 25
8
6
10 12 14
16
Ic = 18 A
4
29
8
7
0
0
1
23
Base current IB (A)
4
5
2SC5859
10
1
8
0.1
VCE(sat) – IC
Common emitter
Tc = 25
6
10 IC/IB = 4
0.01
1
10
Collector current IC (A)
100
VCE – IB
10
Common emitter
Tc = 25
8
6
4
9
28
7
0
0
10 12 14
16
Ic = 18 A
12 3
Base current IB (A)
4
5
VCE (sat) – IC
10
Common emitter
Tc = 25
6
1
10
8
0.1
IC/IB = 4
0.01
1
10
Collector current IC (A)
100
VCE – IB
10
Common emitter
Tc = 100
8
6
10 12 14
16
Ic = 18 A
4
9
28
7
0
01 234
Base current IC (A)
5
VCE (sat) – IC
10
Common emitter
Tc = 100
6
1 IC/IB = 4
10
8
0.1
0.01
1
10
Collector current IC (A)
100
3 2004-5-18



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2SC5859
rth(j-c) – tw
10
1
0.1
0.01
0.001
10μ
100μ
1m
Tc = 25(Infinite heat sink)
Curves should be applied in thermal
limited area. (single nonrepetitive pulse)
10m 100m 1 10 100 1000
Pulse width tw (s)
Safe Operating Area
100
IC max (Pulse)*
1 ms* 100 µs*
10 µs*
IC max (Continuous)*
10
10 ms*
100 ms*
DC operation
1 Tc = 25°C
0.1
*:Single nonrepetitive pulse
Tc = 25°C
Curves must be derated
linearly with increase in
temperature.
0.01
1
10
VCEO max
100 1000
Collector-emitter voltage VCE (V)
PC – Tc
250
Infinite heat sink
200
150
100
50
0
0 25 50 75 100 125 150
Case temperature Tc (°C)
Reverse Bias – Safe Operating Area
100
IC max (Pulse)
620V,46A
10
1
1700V,0.14A
0.1
0.01
Ta = 25
Non repeated pulse
IB2 = 3A
L = 500 μH
0.001
10
100
VCBO max
1000
10000
Collector-emitter voltage VCE (V)
4 2004-5-18



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