2SC5509 Datasheet PDF - Renesas

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2SC5509
Renesas

Part Number 2SC5509
Description NPN SILICON RF TRANSISTOR
Page 10 Pages


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2SC5509
Preliminary Data Sheet
NPN SILICON RF TRANSISTOR
FOR MEDIUM OUTPUT POWER, LOW-NOISE, HIGH-GAIN AMPLIFICATION
FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04)
R09DS0056EJ0300
Rev.3.00
Mar 5, 2013
FEATURES
Ideal for medium output power amplification
NF = 1.2 dB TYP., Ga = 12 dB TYP. @ VCE = 2 V, IC = 10 mA, f = 2 GHz
Maximum available power gain: MAG = 14 dB TYP. @ VCE = 2 V, IC = 50 mA, f = 2 GHz
fT = 25 GHz technology adopted
Flat-lead 4-pin thin-type super minimold (M04) package
<R> ORDERING INFORMATION
Part Number
2SC5509
2SC5509-T2
Order Number
2SC5509-A
2SC5509-T2-A
Quantity
50 pcs (Non reel)
3 kpcs/reel
Package
Flat-lead 4-pin
thin-type super
minimold (M04)
(Pb-Free)
Supplying Form
8 mm wide embossed taping
Pin 1 (Emitter), Pin 2 (Collector) face
the perforation side of the tape
Remark To order evaluation samples, please contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TC = 25°C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Note Free air.
Symbol
VCBO
VCEO
VEBO
IC
PtotNote
Tj
Tstg
Ratings
15
3.3
1.5
100
190
150
65 to +150
Unit
V
V
V
mA
mW
°C
°C
THERMAL RESISTANCE
Parameter
Junction to Case Resistance
Junction to Ambient Resistance
Symbol
Rth j-c
Rth j-a
Ratings
95
650
Unit
°C /W
°C /W
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
R09DS0056EJ0300 Rev.3.00
Mar 5, 2013
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2SC5509
Chapter Title
ELECTRICAL CHARACTERISTICS (TA = +25 °C)
Parameter
DC Characteristics
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
RF Characteristics
Gain Bandwidth Product
Insertion Power Gain
Noise Figure
Reverse Transfer Capacitance
Maximum Available Power Gain
Maximum Stable Power Gain
Gain 1 dB Compression Output
Power
3rd Order Intermodulation
Distortion Output Intercept Point
Symbol
Conditions
ICBO
IEBO
hFENote 1
VCB = 5 V, IE = 0
VEB = 1 V, IC = 0
VCE = 2 V, IC = 10 mA
fT
|S21e|2
NF
Cre Note 2
MAG Note 3
MSG Note 4
PO (1 dB)
VCE = 3 V, IC = 90 mA, f = 2 GHz
VCE = 2 V, IC = 50 mA, f = 2 GHz
VCE = 2 V, IC = 10 mA, f = 2 GHz,
ZS = Zopt
VCB = 2 V, IE = 0, f = 1 MHz
VCE = 2 V, IC = 50 mA, f = 2 GHz
VCE = 2 V, IC = 50 mA, f = 2 GHz
VCE = 2 V, IC = 70 mA Note 5, f = 2 GHz
OIP3
VCE = 2 V, IC = 70 mA Note 5, f = 2 GHz
MIN.
50
13
8
TYP.
70
15
11
1.2
0.5
14
15
17
27
MAX.
600
600
100
1.7
0.75
Unit
nA
nA
GHz
dB
dB
pF
dB
dB
dBm
dBm
Notes 1. Pulse measurement: PW 350 μs, Duty Cycle 2%
2. Collector to base capacitance when the emitter grounded
3. MAG =
S21
S12
(K – (K2 – 1) )
4. MSG =
S21
S12
5. Collector current when PO (1 dB) is output
hFE CLASSIFICATION
Rank
Marking
hFE Value
FB/YFB
T80
50 to 100
R09DS0056EJ0300 Rev.3.00
Mar 5, 2013
Page 2 of 8
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2SC5509
Chapter Title
TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)
Thermal/DC Characteristics
TOTAL POWER DISSIPATION vs. AMBIENT
TEMPERATURE, CASE TEMPERATURE
400
350
330
300
Mounted on
250 ceramic substrate
(15 × 15 mm, t = 0.6 mm)
200
190
150
Free Air
100
When case temperature
is specified
50
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
50
VCE = 2 V
40
30
20
10
0 25 50 75 100 125 150
Ambient Temperature TA (˚C), Case Temperature TC (˚C)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
150
0 0.2 0.4 0.6 0.8 1.0 1.2
Base to Emitter Voltage VBE (V)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
200
VCE = 2 V
100
IB
=
1
1
100
000
900
μA
μA
μA
800 μA
700 μA
50
600 μA
500 μA
400 μA
300 μA
200 μA
100 μA
0 12345
Collector to Emitter Voltage VCE (V)
Capacitance/fT Characteristics
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
1.00
f = 1 MHz
0.80
0.60
0.40
0.20
0 1.0 2.0 3.0 4.0 5.0
Collector to Base Voltage VCB (V)
Remark The graphs indicate nominal characteristics.
150
100
50
0
0.001
0.01
0.1
1
10
Collector Current IC (mA)
100
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
30
VCE = 3 V
f = 2 GHz
25
20
15
10
5
0
1 10 100 1 000
Collector Current IC (mA)
R09DS0056EJ0300 Rev.3.00
Mar 5, 2013
Page 3 of 8
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2SC5509
Gain Characteristics
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
40
VCE = 2 V
35 IC = 50 mA
30 MSG
25 MAG
20
15
10
5
0
0.1
|S21e|2
1.0
10.0
Frequency f (GHz)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
30
VCE = 2 V
f = 1 GHz
25
MSG
MAG
20
15 |S21e|2
10
5
0
1 10
Collector Current IC (mA)
Output Characteristics
100
OUTPUT POWER, COLLECTOR
CURRENT vs. INPUT POWER
25
VCE = 2 V
f = 1 GHz
20
150
Pout
125
15 100
IC
10 75
5 50
0 25
–5
–15 –10
–5
0
0
5 10 15
Input Power Pin (dBm)
Remark The graphs indicate nominal characteristics.
Chapter Title
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
30
VCE = 2 V
f = 2 GHz
25
20
MSG
MAG
15
10
|S21e|2
5
0
1 10 100
Collector Current IC (mA)
OUTPUT POWER, COLLECTOR
CURRENT vs. INPUT POWER
25
VCE = 2 V
f = 2 GHz
20
150
125
Pout
15 100
10 75
5 50
IC
0 25
–5
–15
–10 –5
0
5
Input Power Pin (dBm)
10
0
15
R09DS0056EJ0300 Rev.3.00
Mar 5, 2013
Page 4 of 8
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