2SC5509 Datasheet PDF - NEC

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2SC5509
NEC

Part Number 2SC5509
Description NPN SILICON RF TRANSISTOR
Page 15 Pages


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DATA SHEET
NPN SILICON RF TRANSISTOR
2SC5509
NPN SILICON RF TRANSISTOR FOR
MEDIUM OUTPUT POWER LOW NOISE HIGH-GAIN AMPLIFICATION
FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD
FEATURES
• Ideal for medium output power amplification
• NF = 1.2 dB TYP., Ga = 12 dB TYP. @ VCE = 2 V, IC = 10 mA, f = 2 GHz
• Maximum available power gain: MAG = 14 dB TYP. @ VCE = 2 V, IC = 50 mA, f = 2 GHz
• fT = 25 GHz technology adopted
• Flat-lead 4-pin thin-type super minimold package
ORDERING INFORMATION
Part Number
2SC5509
2SC5509-T2
Quantity
50 pcs (Non reel)
3 kpcs/reel
Supplying Form
• 8 mm wide embossed taping
• Pin 1 (Emitter), Pin 2 (Collector) face the perforation side of the tape
Remark To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
P Note
tot
Tj
Tstg
Ratings
15
3.3
1.5
100
190
150
65 to +150
Unit
V
V
V
mA
mW
°C
°C
Note Free Air
Because this product uses high-frequency technology, avoid excessive static electricity, etc.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10009EJ01V0DS (1st edition)
Date Published October 2001 CP(K)
Printed in Japan
© NEC Compound Semiconductor Devices 2001
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2SC5509
THERMAL RESISTANCE
Parameter
Junction to Case Resistance
Junction to Ambient Resistance
Symbol
Rth j-c
Rth j-a
Ratings
95
650
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TA = +25°C)
Parameter
Symbol
Test Conditions
DC Characteristics
Collector Cut-off Current
ICBO VCB = 5 V, IE = 0 mA
Emitter Cut-off Current
DC Current Gain
IEBO VBE = 1 V, IC = 0 mA
h Note 1
FE
VCE = 2 V, IC = 10 mA
RF Characteristics
Gain Bandwidth Product
fT VCE = 3 V, IC = 90 mA, f = 2 GHz
Insertion Power Gain
S21e2 VCE = 2 V, IC = 50 mA, f = 2 GHz
Noise Figure
NF VCE = 2 , IC = 10 mA, f = 2 Hz,
ZS = Zopt
Reverse Transfer Capacitance
C Note 2
re
VCB = 2 V, IE = 0 mA, f = 1 MHz
Maximum Available Power Gain
MAG Note 3 VCE = 2 V, IC = 50 mA, f = 2 GHz
Maximum Stable Power Gain
MSG Note 4 VCE = 2 V, IC = 50 mA, f = 2 GHz
Gain 1 dB Compression Output Power PO (1 dB) VCE = 2 V, IC = 70 mA Note 5, f = 2 GHz
3rd Order Intermodulation Distortion
Output Intercept Point
OIP3 VCE = 2 V, IC = 70 mA Note 5, f = 2 GHz
MIN.
50
13
8
TYP. MAX.
600
600
70 100
15
11
1.2 1.7
0.5 0.75
14
15
17
27
Unit
nA
nA
GHz
dB
dB
pF
dB
dB
dBm
dBm
Notes 1. Pulse measurement: PW 350 µs, Duty Cycle 2%
2. Collector to base capacitance when the emitter grounded
3. MAG = S21 (K – (K2 – 1) )
S12
4. MSG = S21
S12
5. Collector current when PO (1 dB) is output
hFE CLASSIFICATION
Rank
Marking
hFE Value
FB
T80
50 to 100
2 Data Sheet PU10009EJ01V0DS
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2SC5509
TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25°C)
Thermal/DC Characteristics
TOTAL POWER DISSIPATION vs. AMBIENT
TEMPERATURE, CASE TEMPERATURE
400
350
330
300
Mounted on
250 ceramic substrate
(15 × 15 mm, t = 0.6 mm)
200
190
150
Free Air
100
When case temperature
is specified
50
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
50
VCE = 2 V
40
30
20
10
0 25 50 75 100 125 150
Ambient Temperature TA (˚C), Case Temperature TC (˚C)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
150
0 0.2 0.4 0.6 0.8 1.0 1.2
Base to Emitter Voltage VBE (V)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
200
VCE = 2 V
100
IB
=
1
1
100
000
900
µA
µA
µA
800 µA
700 µA
50
600 µA
500 µA
400 µA
300 µA
200 µA
100 µA
0 12345
Collector to Emitter Voltage VCE (V)
Capacitance/fT Characteristics
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
1.00
0.80
f = 1 MHz
0.60
0.40
0.20
150
100
50
0
0.001
0.01 0.1 1 10
Collector Current IC (mA)
100
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
30
VCE = 3 V
f = 2 GHz
25
20
15
10
5
0 1.0 2.0 3.0 4.0 5.0
Collector to Base Voltage VCB (V)
0
1
Data Sheet PU10009EJ01V0DS
10 100
Collector Current IC (mA)
1 000
3
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2SC5509
Gain Characteristics
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
40 VCE = 2 V
35 IC = 50 mA
30 MSG
25 MAG
20
15
10
5
0
0.1
|S21e|2
1.0
10.0
Frequency f (GHz)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
30
VCE = 2 V
f = 1 GHz
25
MSG
MAG
20
15 |S21e|2
10
5
0
1 10 100
Collector Current IC (mA)
Output Characteristics
OUTPUT POWER, COLLECTOR
CURRENT vs. INPUT POWER
25
VCE = 2 V
f = 1 GHz
20
Pout
150
125
15 100
IC
10 75
5 50
0 25
–5
–15
–10 –5
0
5
Input Power Pin (dBm)
10
0
15
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
30
VCE = 2 V
f = 2 GHz
25
20
MSG
MAG
15
10
|S21e|2
5
0
1 10 100
Collector Current IC (mA)
OUTPUT POWER, COLLECTOR
CURRENT vs. INPUT POWER
25
VCE = 2 V
f = 2 GHz
20
150
125
Pout
15 100
10 75
5 50
IC
0 25
–5
–15
–10 –5
0
5
Input Power Pin (dBm)
10
0
15
4 Data Sheet PU10009EJ01V0DS
Free Datasheet http://www.datasheet4u.com/



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