2SC5507 Datasheet PDF - NEC

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2SC5507
NEC

Part Number 2SC5507
Description NPN SILICON RF TRANSISTOR FOR LOW CURRENT/ LOW NOISE/ HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD
Page 12 Pages


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PRELIMINARY DATA SHEET
NPN SILICON RF TRANSISTOR
2SC5507
NPN SILICON RF TRANSISTOR FOR LOW CURRENT,
LOW NOISE, HIGH-GAIN AMPLIFICATION
FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD
FEATURES
• Low noise and high gain with low collector current
• NF = 1.2 dB, Ga = 16 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 2 mA
• Maximum stable power gain: MSG = 22 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 5 mA
• fT = 25 GHz technology
• Flat-lead 4-pin thin super mini-mold (t = 0.59 mm)
ORDERING INFORMATION
Part Number
Quantity
2SC5507
Loose product (50 pcs)
2SC5507-T2
Taping product (3 kpcs/reel)
Packaging Style
• 8 mm wide emboss taping
• 1 pin (emitter), 2 pin (collector) feed hole direction
Remark To order evaluation samples, consult your NEC sales representative (available in 50-pcs units).
ABSOLUTE MAXIMUM RATINGS
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
P Note
tot
Tj
Tstg
Ratings
15
3.3
1.5
12
39
150
–65 to +150
Unit
V
V
V
mA
mW
°C
°C
Note TA = +25 °C (free air)
THERMAL RESISTANCE
Item
Junction to Case Resistance
Junction to Ambient Resistance
Symbol
Rth j-c
Rth j-a
Value
240
650
Unit
°C/W
°C/W
Because this product uses high-frequency technology, avoid excessive static electricity, etc.
The information in this document is subject to change without notice.
Document No. P13864EJ1V0DS00 (1st edition)
Date Published March 1999 N CP(K)
Printed in Japan
©
1999



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2SC5507
ELECTRICAL CHARACTERISTICS (TA = +25 °C)
Parameter
DC characteristics
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
RF Characteristics
Reverse Transfer Capacitance
Gain Bandwidth Product
Noise Figure
Insertion Power Gain
Maximum Stable Power Gain
Output Power at 1 dB
Compression Point
Output Power at Third Order
Intercept Point
Symbol
Test Conditions
ICBO
IEBO
h Note 1
FE
VCB = 5 V, IE = 0
VEB = 1 V, IC = 0
VCE = 2 V, IC = 5 mA
C Note 2
re
fT
NF
|S21e|2
MSGNote 3
P-1
VCB = 2 V, IE = 0, f = 1 MHz
VCE = 3 V, IC = 10 mA, f = 2 GHz
VCE = 2 V, IC = 2 mA, f = 2 GHz, ZS = Zopt
VCE = 2 V, IC = 5 mA, f = 2 GHz
VCE = 2 V, IC = 5 mA, f = 2 GHz
VCE = 2 V, IC = 5 mANote 4, f = 2 GHz
OIP3
VCE = 2 V, IC = 5 mANote 4, f = 2 GHz
MIN. TYP. MAX.
– – 100
– – 100
50 70 100
– 0.08 0.12
20 25
– 1.2 1.5
14 17
– 22 –
–5–
– 15 –
Unit
nA
nA
pF
GHz
dB
dB
dB
dBm
Notes 1. Pulse measurement PW 350 µs, Duty cycle 2%
2. Emitter to base capacitance measured using capacitance meter (self-balancing bridge method) when
the emitter is connected to the guard pin
3.
MSG = S21
S12
4. Collector current when P-1 is output
hFE CLASSIFICATION
Rank
Marking
hFE
FB
T78
50 to 100
2 Preliminary Data Sheet P13864EJ1V0DS00



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2SC5507
TYPICAL CHARACTERISTICS (TA = +25 °C)
Thermal/DC Characteristics
Total Power Dissipation vs.
Ambient Temperature, Case Temperature
250
PT-TA: Free air
PT-TA: Mounted on ceramic board
200 (15 mm × 15 mm, t = 0.6 mm)
PT-TC: When case temperature
is specified
150
100
50
0
0 25 50 75 100 125 150
Ambient Temperature TA (°C), Case Temperature TC (°C)
Collector Current vs. Collector to Emitter Voltage
25
300 µ A
280 µ A
20
15
260
240
220
200
180
160
140
120
µµµµµµµµµAAAAAAAA
100 µA
80 µA
10
60 µA
40 µA
IB = 20 µA
5
012 34 5
Collector to Emitter Voltage VCE (V)
Capacitance/fT Characteristics
Reverse Transfer Capacitance vs. Collector to Base Voltage
0.30
f = 1 MHz
0.25
0.20
0.15
0.10
0.05
0 1.0 2.0 3.0 4.0 5.0
Collector to Base Voltage VCB (V)
Collector Current vs. DC Base Voltage
50
VCE = 2 V
40
30
20
10
0 0.2 0.4 0.6 0.8 1.0 1.2
DC Base Voltage VBE (V)
DC Current Gain vs. Collector Current
200
100 VCE = 2 V
10
1
0.001
0.01 0.1 1 10
Collector Current IC (mA)
100
Gain Bandwidth Product vs. Collector Current
30
VCE = 3 V
f = 2 GHz
25
20
15
10
5
01 10 100
Collector Current IC (mA)
Preliminary Data Sheet P13864EJ1V0DS00
3



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Gain Characteristics
Insertion Power Gain, Maximum Available Power Gain,
Maximum Stable Power Gain vs. Frequency
40
35
VCE = 2 V
IC = 5 mA
30 MSG
25
20
|S21e|2
15
MAG
10
5
0
0.1 1.0 10.0
Frequency f (GHz)
Insertion Power Gain, Maximum Stable Power Gain
vs. Collector Current
30
MSG
25
f = 1 GHz
VCE = 2 V
20
|S21e|2
15
10
5
0
1 10
Collector Current IC (mA)
Output Characteristics
100
Output Power, Collector Current vs. Input Power
10 25
f = 1 GHz
VCE = 2 V
Pout
5 20
0 15
–5 10
IC
–10 5
–15
–30
–25 –20 –15 –10
Input Power Pin (dBm)
0
–5
2SC5507
Insertion Power Gain, Maximum Available Power Gain,
Maximum Stable Power Gain vs. Collector Current
30
f = 2 GHz
VCE = 2 V
25 MAG
MSG
20
15 |S21e|2
10
5
0
1 10 100
Collector Current IC (mA)
Output Power, Collector Current vs. Input Power
10
f = 2 GHz
VCE = 2 V
25
Pout
5 20
0 15
–5 10
IC
–10 5
–15
–30
–25 –20 –15 –10
Input Power Pin (dBm)
0
–5
4 Preliminary Data Sheet P13864EJ1V0DS00



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2SC5507 NPN SILICON RF TRANSISTOR FOR LOW CURRENT/ LOW NOISE/ HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD 2SC5507
NEC
2SC5507 pdf

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