2SC5338 Datasheet PDF - Renesas

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2SC5338
Renesas

Part Number 2SC5338
Description NPN SILICON RF TRANSISTOR
Page 10 Pages


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To our customers,
Old Company Name in Catalogs and Other Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas Electronics Corporation took over all the business of both
companies. Therefore, although the old company name remains in this document, it is a valid
Renesas Electronics document. We appreciate your understanding.
Renesas Electronics website: http://www.renesas.com
April 1st, 2010
Renesas Electronics Corporation
Issued by: Renesas Electronics Corporation (http://www.renesas.com)
Send any inquiries to http://www.renesas.com/inquiry.
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DATA SHEET
NPN SILICON RF TRANSISTOR
2SC5338
NPN SILICON RF TRANSISTOR FOR
HIGH-FREQUENCY LOW DISTORTION AMPLIFIER
4-PIN POWER MINIMOLD
FEATURES
• High gain: S21e2 = 10 dB TYP. @ VCE = 5 V, IC = 50 mA, f = 1 GHz
• Low distortion, low voltage: IM2 = 55 dB TYP., IM3 = 76 dB TYP. @ VCE = 5 V, IC = 50 mA, Vin = 105 dBµV/75
• 4-pin power minimold package with improved gain from the 2SC4703
ORDERING INFORMATION
Part Number
2SC5338
2SC5338-T1
Quantity
25 pcs (Non reel)
1 kpcs/reel
Supplying Form
• Magazine case
• 12 mm wide embossed taping
• Collector face the perforation side of the tape
Remark To order evaluation samples, consult your NEC sales representative.
Unit sample quantity is 25 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
P Note
tot
Tj
Tstg
Ratings
25
12
2.5
150
1.8
150
65 to +150
Unit
V
V
V
mA
W
°C
°C
Note Mounted on 16 cm2 × 0.7 mm (t) ceramic substrate (Copper plating)
Because this product uses high-frequency technology, avoid excessive static electricity, etc.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P10940EJ2V0DS00 (2nd edition)
Date Published August 2001 NS CP(K)
Printed in Japan
The mark shows major revised points.
©
1996, 2001
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2SC5338
ELECTRICAL CHARACTERISTICS (TA = +25°C)
Parameter
Symbol
Test Conditions
DC Characteristics
Collector Cut-off Current
ICBO VCB = 20 V, IE = 0 mA
Emitter Cut-off Current
DC Current Gain
IEBO
h Note 1
FE
VBE = 2 V, IC = 0 mA
VCE = 5 V, IC = 50 mA
RF Characteristics
Gain Bandwidth Product
Insertion Power Gain
fT VCE = 5 V, IC = 50 mA
S21e2 VCE = 5 V, IC = 50 mA, f = 1 GHz
Noise Figure
Reverse Transfer Capacitance
2nd Order Intermoduration Distortion
3rd Order Intermoduration Distortion
NF
C Note 2
re
IM2
IM3
VCE = 5 V, IC = 50 mA, f = 1 GHz
VCB = 5 V, IE = 0 mA, f = 1 MHz
IC = 50 mA,
Vin = 105 dBµV/75 ,
f = 190 90 MHz
VCE = 5 V
VCE = 10 V
IC = 50 mA,
Vin = 105 dBµV/75 ,
f = 2 × 190 200 MHz
VCE = 5 V
VCE = 10 V
MIN.
50
8.5
TYP.
6.0
10
1.0
55
63
76
83
MAX.
1.5
1.5
250
3.5
2.0
Unit
µA
µA
GHz
dB
dB
pF
dB
dB
Notes 1. Pulse measurement: PW 350 µs, Duty Cycle 2%
2. Collector to base capacitance when the emitter grounded
hFE CLASSIFICATION
Rank
Marking
hFE Value
SH
SH
50 to 100
SF
SF
80 to 160
SE
SE
125 to 250
2 Data Sheet P10940EJ2V0DS
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