2SC5337 Datasheet PDF - Renesas

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2SC5337
Renesas

Part Number 2SC5337
Description NPN SILICON RF TRANSISTOR
Page 7 Pages


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Preliminary Data Sheet
2SC5337
NPN Silicon RF Transistor for High-Frequency
Low Distortion Amplifier 4-Pin Power Minimold
FEATURES
• Low distortion: IM2 = 59.0 dB TYP., IM3 = 82.0 dB TYP. @ VCE = 10 V, IC = 50 mA
• Low noise
NF = 1.5 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 500 MHz
NF = 2.0 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 1 GHz
• 4-pin power minimold package with improved gain from the 2SC4536
R09DS0047EJ0300
Rev.3.00
Sep 14, 2012
<R> ORDERING INFORMATION
Part Number
2SC5337
2SC5337-T1
Order Number
2SC5337-AZ
2SC5337-T1-AZ
Package
4-pin power
minimold
(Pb-Free) Note
Quantity
25 pcs (Non reel)
1 kpcs/reel
Supplying Form
• Magazine case
• 12 mm wide embossed taping
• Collector face the perforation side of the tape
Note Contains Lead in the part except the electrode terminals.
Remark To order evaluation samples, please contact your nearby sales office.
Unit sample quantity is 25 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
Ptot Note
Tj
Tstg
Ratings
30
15
3.0
250
2.0
150
65 to +150
Unit
V
V
V
mA
W
°C
°C
Note Mounted on 16 cm2 × 0.7 mm (t) ceramic substrate (Copper plating)
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
R09DS0047EJ0300 Rev.3.00
Sep 14, 2012
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2SC5337
<R> ELECTRICAL CHARACTERISTICS (TA = +25°C)
Parameter
Symbol
Test Conditions
DC Characteristics
Collector Cut-off Current
ICBO VCB = 20 V, IE = 0
Emitter Cut-off Current
DC Current Gain
IEBO VBE = 2 V, IC = 0
hFE Note 1 VCE = 10 V, IC = 50 mA
RF Characteristics
Insertion Power Gain
S21e2 VCE = 10 V, IC = 50 mA, f = 1 GHz
Noise Figure (1)
NF Note 2 VCE = 10 V, IC = 50 mA, f = 500 MHz
Noise Figure (2)
NF Note 2 VCE = 10 V, IC = 50 mA, f = 1 GHz
2nd Order Intermoduration Distortion IM2 VCE = 10 V, IC = 50 mA, RS = RL = 75 Ω,
Vin = 105 dBμV/75 Ω, f1 = 190 MHz,
f2 = 90 MHz, f = f1 f2
3rd Order Intermoduration Distortion
IM3 VCE = 10 V, IC = 50 mA, RS = RL = 75 Ω,
Vin = 105 dBμV/75 Ω, f1 = 190 MHz,
f2 = 200 MHz, f = 2 × f1 f2
MIN.
60
7.0
TYP. MAX.
0.01 5.0
0.03 5.0
120 200
8.3 –
1.5 3.5
2.0 3.5
59.0 –
82.0 –
Unit
μA
μA
dB
dB
dB
dB
dB
Notes 1. Pulse measurement: PW 350 μs, Duty Cycle 2%
2. RS = RL = 50 Ω, tuned
<R> hFE CLASSIFICATION
Rank
Marking
hFE Value
QR/YQR
QR
60 to 120
QS/YQS
QS
100 to 200
R09DS0047EJ0300 Rev.3.00
Sep 14, 2012
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2SC5337
TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25°C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Mounted on Ceramic Substrate
(16 cm2 × 0.7 mm (t) )
2.0
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
5.0
f = 1 MHz
3.0
2.0
1.0
0 50 100 150
Ambient Temperature TA (˚C)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
IB = 0.6 mA
100 0.5 mA
0.4 mA
80
60 0.3 mA
40 0.2 mA
20 0.1 mA
0 10 20
Collector to Emitter Voltage VCE (V)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
10
5
3
2
1
0.5
VCE = 10 V
0.3 f = 1 GHz
10 30 50 70 100
Collector Current IC (mA)
Remark The graphs indicate nominal characteristics.
1.0
0.5
0.3
1
35
10 20 30
Collector to Base Voltage VCB (V)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
300
VCE = 10 V
100
50
10
0.1
1 10 100
Collector Current IC (mA)
1 000
INSERTION POWER GAIN
vs. COLLECTOR CURRENT
VCE = 10 V
f = 1 GHz
10
5
0
10
30 50 70 100
Collector Current IC (mA)
R09DS0047EJ0300 Rev.3.00
Sep 14, 2012
Page 3 of 5
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2SC5337
INSERTION POWER GAIN, MAG
vs. FREQUENCY
|S21e|2
20
VCE = 10 V
IC = 50 mA
MAG
10
0
0.2 0.4 0.6 0.8 1.0 1.4 2.0
Frequency f (GHz)
IM3, IM2+, IM2– vs.
COLLECTOR CURRENT
80
VCE = 10 V
IM3
70
60
50
40
30
10
IM2+
IM2–
IM3 : Vin = 110 dBμV/75 Ω 2 tone each
f = 2 × 190 – 200 MHz
IM2+ : Vin = 105 dBμV/75 Ω 2 tone each
f = 90 + 100 MHz
IM2– : Vin = 105 dBμV/75 Ω 2 tone each
f = 190 – 90 MHz
50 100
300
Collector Current IC (mA)
NOISE FIGURE vs.
COLLECTOR CURRENT
7
VCE = 10 V
6 f = 1 GHz
5
4
3
2
1
0
5
10 20
50 100
Collector Current IC (mA)
Remark The graphs indicate nominal characteristics.
<R> S-PARAMETERS
S-parameters and noise parameters are provided on our web site in a form (S2P) that enables direct import of the
parameters to microwave circuit simulators without the need for keyboard inputs.
Click here to download S-parameters.
[Products] [RF Devices] [Device Parameters]
URL http://www.renesas.com/products/microwave/
R09DS0047EJ0300 Rev.3.00
Sep 14, 2012
Page 4 of 5
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