2SC5337 Datasheet PDF - NEC

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2SC5337
NEC

Part Number 2SC5337
Description NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER
Page 8 Pages


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PRELIMIDNAATRAY SDHAETEATSHEET
Silicon Transistor
2SC5337
NPN EPITAXIAL SILICON TRANSISTOR
HIGH FREQUENCY LOW DISTORTION AMPLIFIER
DESCRIPTION
The 2SC5337 is a high-frequency transistor designed for a low distortion and low noise amplifier on the VHF to
UHF band, which is suitable for the CATV, tele-communication, and such.
FEATURES
Low distortion
IM2 = 59 dB TYP. @VCE = 10 V, IC = 50 mA
IM3 = 82 dB TYP. @VCE = 10 V, IC = 50 mA
Low noise
NF = 1.5 dB TYP. @VCE = 10 V, IC = 10 mA, f = 1 GHz
New power mini-mold package version of a 4-pin type
gain-improved on the 2SC3356
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PT Note1
Tj
Tstg
Rating
30
15
3.0
250
2.0
150
–65 to +150
Unit
V
V
V
mA
W
°C
°C
PACKAGE DIMENSIONS
(in millimeters)
4.5±0.1
1.6±0.2
1.5±0.1
C
EB
E
0.42
±0.06
0.42
±0.06
1.5 0.46
3.0 ±0.06
0.25±0.02
PIN CONNECTIONS
E: Emitter
C: Collector
B: Base
Note 1. 0.7 mm × 16 cm2 double sided ceramic substrate (Copper plaiting)
Document No. P10939EJ1V0DS00 (1st edition)
Date Published April 1996 P
Printed in Japan
© 1996



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2SC5337
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Insertion Power Gain
Noise Figure 1
Noise Figure 2
2nd Order
Intermoduration
Distortion
3rd Order
Intermoduration
Distortion
Symbol
ICBO
IEBO
hFE
| S21e |2
NF1
NF2
IM2
IM3
Test Conditions
VCB = 20 V, IE = 0
VEB = 2 V, IC = 0
VCE = 10 V, IC = 50 mANote2
VCE = 10 V, IC = 50 mA, f = 1 GHz
VCE = 10 V, IC = 50 mA, f = 500 MHzNote3
VCE = 10 V, IC = 50 mA, f = 1 GHzNote3
VCE = 10 V, IC = 50 mA, RS = RL = 75
Pin = 105 dB µV/75 , f1 = 190 MHz
f2 = 90 MHz, f = f1 f2
VCE = 10 V, IC = 50 mA, RS = RL = 75
Pin = 105 dB µV/75 , f1 = 190 MHz
f2 = 200 MHz, f = 2 × f1 f2
Notes 2. Pulse measurement: PW 350 µS, Duty Cycle 2 %
3. RS = RL = 50 , tuned
hFE Classification
Rank
Marking
hFE
QQ
QQ
40 to 80
QR
QR
60 to 120
QS
QS
100 to 200
MIN.
40
7.0
TYP.
0.01
0.03
120
8.3
1.5
2.0
59.0
MAX.
5.0
5.0
200
3.5
3.5
Unit
µA
µA
dB
dB
dB
dB
82.0 dB
2



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TYPICAL CHARACTERISTICS (TA = 25 °C)
2SC5337
3



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COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
IB = 0.6 mA
100
0.5 mA
80 0.4 mA
60
0.3 mA
40
0.2 mA
20
0.1 mA
0 10 20
VCE - Collector to Emitter Voltage - V
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
10
VCE = 10 V
f = 1 GHZ
5
3
2
1
0.5
0.3
10 30 50 70 100
IC - Collector Current - mA
2SC5337
DC CURRENT GAIN vs.
COLLECTOR CURRENT
300
VCE = 10 V
100
50
10
0.1
1 10 100
IC - Collector Current - mA
1000
FEED-BACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
5.0
f = 1.0 MHZ
3.0
2.0
1.0
0.5
0.3
1
35
10 20 30
VCB - Collector to Bese Voltage - V
INSERTION POWER GAIN vs.
COLLECTOR CURRENT
VCE = 10 V
f = 1 GHZ
10
INSERTION POWER GAIN
MAXIMUM AVAILABLE GAIN vs. FREQUENCY
S21e 2
MAG
20
5
0 10
30 50 70 100
IC - Collector Current - mA
10
VCE = 10 V
IC = 50 mA
0 0.2 0.4 0.6 0.8 10 14 2.0
f - Frequency - GHZ
4



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