2SC4517A Datasheet PDF - SavantIC


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2SC4517A
SavantIC

Part Number 2SC4517A
Description SILICON POWER TRANSISTOR
Page 4 Pages

2SC4517A datasheet pdf
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www.datSasaheveat4nu.tcIoCm Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC4517 2SC4517A
DESCRIPTION
·With TO-220F package
·High voltage switching transistor
APPLICATIONS
·For switching regulator and
general purpose applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
2SC4517
2SC4517A
Open emitter
VCEO
VEBO
Collector-emitter voltage
Emitter-base voltage
Open base
Open collector
IC Collector current
ICM Collector current-pulse
IB Base current
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
TC=25
VALUE
900
1000
550
7
3
6
1.5
30
150
-55~150
UNIT
V
V
V
A
A
A
W



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www.datSasaheveat4nu.tcIoCm Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC4517 2SC4517A
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0
VCEsat Collector-emitter saturation voltage IC=1A; IB=0.2A
VBEsat
Base-emitter saturation voltage
IC=1A; IB=0.2A
ICBO Collector cut-off current
VCB=800V; IE=0
IEBO Emitter cut-off current
VEB=7V; IC=0
hFE DC current gain
IC=1A ; VCE=4V
COB Output capacitance
IE=0; VCB=10V;f=1MHz
fT Transition frequency
IE=-0.25A ; VCE=12V
Switching times
ton Turn-on time
ts Storage time
tf Fall time
IC=1.0A IB1=0.15A
IB2=-0.45A
VCC=250V ,RL=250B
MIN TYP. MAX UNIT
550 V
0.5 V
1.2 V
100 µA
100 µA
10 30
35 pF
6 MHz
0.7 µs
4.0 µs
0.5 µs
2



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www.datSasaheveat4nu.tcIoCm Semiconductor
Silicon NPN Power Transistors
PACKAGE OUTLINE
Product Specification
2SC4517 2SC4517A
Fig.2 Outline dimensions
3



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www.datSasaheveat4nu.tcIoCm Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC4517 2SC4517A
4




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