2SC4233 Datasheet PDF - SavantIC

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2SC4233
SavantIC

Part Number 2SC4233
Description SILICON POWER TRANSISTOR
Page 3 Pages


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www.datSasaheveat4nu.tcIoCm Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC4233
DESCRIPTION
With TO-220C package
·High breakdown voltage
·Switching power transistor
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
·Wit
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
VCEO
Collector-base voltage
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current
ICM Collector current-peak
IB Base current
IBM Base current-peak
PC Collector dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction case
VALUE
1200
800
7
3
6
1
2
60
150
-55~150
UNIT
V
V
V
A
A
A
A
W
MAX
2.08
UNIT
/W



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www.datSasaheveat4nu.tcIoCm Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC4233
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A; RBE=9
VCE(sat) Collector-emitter saturation voltage IC=1.5A; IB=0.3A
VBE(sat) Base-emitter saturation voltage
IC=1.5A; IB=0.3A
ICBO Collector cut-off current
ICEO Collector cut-off current
At rated voltage
IEBO Emitter cut-off current
At rated voltage
hFE-1
DC current gain
IC=1.5A ; VCE=5V
hFE-2
DC current gain
IC=1mA ; VCE=5V
fT Transition frequency
IC=0.3A ; VCE=10V
Switching times
ton Turn-on time
tstg Storage time
tf Fall time
VBB2=4V; IC=1.5A
IB1=0.3A;IB2=0.6A
RL=170C
MIN TYP. MAX UNIT
800 V
1.0 V
1.5 V
100 µA
100 µA
8
7
8 MHz
0.5 µs
3.5 µs
0.3 µs
2



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www.datSasaheveat4nu.tcIoCm Semiconductor
Silicon NPN Power Transistors
PACKAGE OUTLINE
Product Specification
2SC4233
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3



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