2SC4231 Datasheet PDF - SavantIC

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2SC4231
SavantIC

Part Number 2SC4231
Description SILICON POWER TRANSISTOR
Page 3 Pages


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www.datSasaheveat4nu.tcIoCm Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC4231
DESCRIPTION
·With ITO-220 package
·Switching power transistor
·High voltage ,high speed
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Fig.1 simplified outline (ITO-220) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
VCEO
Collector-base voltage
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current
ICM Collector current-Peak
IB Base current
IBM Base current-Peak
PT Total power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-C
Thermal resistance junction case
VALUE
1200
800
7
2
4
1
2
30
150
-55~150
UNIT
V
V
V
A
A
A
A
W
MAX
4.16
UNIT
/W



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www.datSasaheveat4nu.tcIoCm Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC4231
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A;IB=0
VCEsat Collector-emitter saturation voltage IC=1A; IB=0.2A
VBEsat
Base-emitter saturation voltage
IC=1A ;IB=0.2A
ICBO
ICEO
IEBO
hFE-1
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
At rated volatge
At rated volatge
IC=1A ; VCE=5V
hFE-2
DC current gain
IC=1mA ; VCE=5V
fT Transition frequency
ton Turn-on time
ts Storage time
tf Fall time
IC=0.2A ; VCE=10V
IC=1;IB1=0.2A;
IB2=0.4A;RL=250C
VBB2=4V
MIN TYP. MAX UNIT
800 V
1.0 V
1.5 V
0.1 mA
0.1 mA
8
7
8 MHz
0.5 µs
3.5 µs
0.3 µs
2



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www.datSasaheveat4nu.tcIoCm Semiconductor
Silicon NPN Power Transistors
PACKAGE OUTLINE
Product Specification
2SC4231
Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm)
3



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