2SC383TM Datasheet PDF - Blue Rocket Electronics

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2SC383TM
Blue Rocket Electronics

Part Number 2SC383TM
Description Silicon NPN transistor
Page 6 Pages


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2SC383TM(BR3DG383TMK)
Rev.C Feb.-2015
DATA SHEET
描述 / Descriptions
TO-92 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-92 Plastic Package.
特征 / Features
高增益:Gpe=33dB(典型值)(f=45MHz),hFE 线性好
High gain: Gpe=33dB(Typ)(f=45MHz),good linearity of hFE..
用途 / Applications
用于电视末级图象中放。
TV final picture IF amplifier applications.
内部等效电路 / Equivalent Circuit
引脚排列 / Pinning
1 23
PIN1Base
PIN 2Collector
PIN 3Emitter
放大及印章代码 / hFE Classifications & Marking
见印章说明。See Marking Instructions.
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2SC383TM(BR3DG383TMK)
Rev.C Feb.-2015
DATA SHEET
极限参数 / Absolute Maximum Ratings(Ta=25)
参数
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Emitter Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符号
Symbol
VCBO
VCEO
VEBO
IC
IE
PC
Tj
Tstg
电性能参数 / Electrical Characteristics(Ta=25)
数值
Rating
50
45
4.0
50
-50
300
150
-55150
单位
Unit
V
V
V
mA
mA
mW
参数
Parameter
Collector to Emitter Breakdown
Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector to Emitter Saturation
Voltage
Base to Emitter Saturation
Voltage
Transition Frequency
符号
Symbol
VCEO
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
fT
Collector Output Capacitance
Cob
Power Gain
Gpe
Collector to Base Time Constant CC.rbb
测试条件
Test Conditions
最小值 典型值 最大值
Min Typ Max
IC=10mA IB=0
VCB=50V IE=0
VEB=3.0V IC=0
VCE=12.5V IC=12.5mA
IC=15mA IB=1.5mA
45
20
0.1
0.1
100
0.2
IC=15mA
VCE=12.5V
VCB=10V
f=1MHz
VCC=12.5V
f=45MHz
VCB=10V
f=30MHz
IB=1.5mA
IC=12.5mA
IE=0
IE=-12.5mA
IE=-1.0mA
300
0.8
29
1.5
2.0
36
25
单位
Unit
V
μA
μA
V
V
MHz
pF
dB
pS
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2SC383TM(BR3DG383TMK)
Rev.C Feb.-2015
电参数曲线图 / Electrical Characteristic Curve
DATA SHEET
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2SC383TM(BR3DG383TMK)
Rev.C Feb.-2015
外形尺寸图 / Package Dimensions
DATA SHEET
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2SC383TM datasheet pdf
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