2SC3320 Datasheet PDF - BLUE ROCKET ELECTRONICS

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2SC3320
BLUE ROCKET ELECTRONICS

Part Number 2SC3320
Description Silicon NPN transistor
Page 6 Pages


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2SC3320
Rev.E Mar.-2016
DATA SHEET
描述 / Descriptions
TO-3P 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-3P Plastic Package.
特征 / Features
高电压,高速开关,高可靠性。
High voltage, high speed switching, High reliability.
用途 / Applications
用于继电器驱动电路,高速转换电路,及其它大电流开关电路。
Relay drivers, high-speed inverters, general high-current switching applications.
内部等效电路 / Equivalent Circuit
引脚排列 / Pinning
PIN1Base
PIN 2Collector
PIN 3Emitter
放大及印章代码 / hFE Classifications & Marking
见印章说明。See Marking Instructions.
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2SC3320
Rev.E Mar.-2016
极限参数 / Absolute Maximum Ratings(Ta=25)
参数
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符号
Symbol
VCBO
VCEO
VCEO(SUS)
VEBO
IC
IB
PD
Tj
Tstg
DATA SHEET
数值
Rating
500
400
400
7.0
15.0
5.0
80.0
150
-40150
单位
Unit
V
V
V
V
A
A
W
电性能参数 / Electrical Characteristics(Ta=25)
参数
Parameter
Collector to Base Breakdown
Voltage
Collector to Emitter Breakdown
Voltage
Collector to Emitter Breakdown
Voltage
Emitter to Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector to Emitter Saturation
Voltage
Base to Emitter Saturation Voltage
Turn-On Time
Storage Time
Fall Time
符号
Symbol
VCBO
VCEO
VCEO(SUS)
VEBO
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
ton
tstg
tf
测试条件
Test Conditions
ICBO=1mA IE=0
最小值 典型值 最大值 单位
Min Typ Max Unit
500 V
ICEO=10mA IB=0
400
V
IC=0.2A
IB=0
IEBO=1mA
VCBO=500V
VEBO=7.0V
VCE=5.0V
IC=0
IE=0
IC=0
IC=6A
IC=6.0A
IB=1.2A
IC=6.0A
IB=1.2A
400
7.0
10
IC=7.5A
IB2=-3.0A
PW=20μs
IB1=1.5A
RL=20
Duty2%
V
V
1.0 mA
1.0 mA
1.0 V
1.5 V
0.5 μs
1.5 μs
0.15 μs
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2SC3320
Rev.E Mar.-2016
电参数曲线图 / Electrical Characteristic Curve
DATA SHEET
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2SC3320
Rev.E Mar.-2016
外形尺寸图 / Package Dimensions
DATA SHEET
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