2SC3212 Datasheet PDF - SavantIC

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2SC3212
SavantIC

Part Number 2SC3212
Description SILICON POWER TRANSISTOR
Page 3 Pages


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SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
DESCRIPTION
·With TO-3PFa package
·Low collector saturation voltage
·High VCBO
·High speed switching
APPLICATIONS
·For high speed switching applications
PINNING
PIN
DESCRIPTION
1 Base
2 Collector
3 Emitter
Product Specification
2SC3212 2SC3212A
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
2SC3212
2SC3212A
Open emitter
VCEO
Collector-emitter voltage
Open base
VEBO
Emitter-base voltage
Open collector
IC Collector current
ICM Collector current-peak
IB Base current
PC Collector power dissipation
Tj Junction temperature
TC=25
Ta=25
Tstg Storage temperature
VALUE
800
900
500
8
7
15
4
100
3
150
-55~150
UNIT
V
V
V
A
A
A
W



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SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
Product Specification
2SC3212 2SC3212A
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A;L=25mH
VCEsat Collector-emitter saturation voltage IC=5A ;IB=1A
VBEsat
Base-emitter saturation voltage
IC=5A ;IB=1A
ICBO
Collector
cut-off current
2SC3212 VCB=800V; IE=0
2SC3212A VCB=900V; IE=0
IEBO Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=0.1A ; VCE=5V
hFE-2
DC current gain
IC=5A ; VCE=5V
fT Transition frequency
IC=0.5A ; VCE=10V;f=1MHz
Switching times
ton Turn-on time
tstg Storage time
tf Fall time
2SC3212
2SC3212A
IC=5A; VCC=200V
IB1=-IB2=1A
2SC3212
2SC3212A
MIN TYP. MAX UNIT
500 V
1.0 V
1.5 V
100 µA
100 µA
15
8
3.5 MHz
1.0
µs
1.2
2.5 µs
1.0
µs
1.2
2



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SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
PACKAGE OUTLINE
Product Specification
2SC3212 2SC3212A
Fig.2 Outline dimensions (unindicated tolerance:±0.30mm)
3



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