2SC2715 Datasheet PDF - GME

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2SC2715
GME

Part Number 2SC2715
Description Silicon Epitaxial Planar Transistor
Page 3 Pages


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Silicon Epitaxial Planar Transistor
FEATURES
z High power gain
z Recommended for FM IF,OSC stage
and AM CONV.IF stage
Pb
Lead-free
APPLICATIONS
z High Frequency Amplifier Applications
Production specification
2SC2715
ORDERING INFORMATION
Type No.
Marking
2SC2715
RR1/RO1/RY1
SOT-23
Package Code
SOT-23
MAXIMUM RATING @ Ta=25unless otherwise specified
Symbol
Parameter
Value
VCBO
Collector-Base Voltage
35
VCEO
Collector-Emitter Voltage
30
VEBO
Emitter-Base Voltage
4
IC Collector Current -Continuous
50
IB Base current
10
PC Collector Dissipation
150
Tj,Tstg
Junction and Storage Temperature
-55 to +125
Units
V
V
V
mA
mA
mW
C099
Rev.A
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Production specification
Silicon Epitaxial Planar Transistor
2SC2715
ELECTRICAL CHARACTERISTICS @ Ta=25unless otherwise specified
Parameter
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector-base output capacitance
Collector-base time constant
Power Gain
Symbol
ICBO
IEBO
hFE
VCE(sat)
VBE
fT
Cob
CC.rbb
Gpe
Test conditions
VCB=35V,IE=0
VEB=4V,IC=0
VCE=12V,IC=2mA
IC=10mA, IB=1mA
IC=10mA, IB=1mA
VCE=10V, IC= 1mA
VCB=10V, IE=0,f=1MHz
VCE=10V,
IE=-1mA,f=30MHz
VCC=6V,
IE=-1mA,f=10.7MHz
MIN TYP
40
100
2.0
27 30
CLASSIFICATION OF hFE(1)
MAX UNIT
0.1 μA
0.1 μA
240
0.4 V
1V
400 MHz
3.2 pF
50 ps
33 dB
Rank
R
O
Y
Range
Marking
40-80
RR1
70-140
RO1
120-240
RY1
TYPICAL CHARACTERISTICS @ Ta=25unless otherwise specified
C099
Rev.A
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Silicon Epitaxial Planar Transistor
PACKAGE OUTLINE
Plastic surface mounted package
A
E
KB
D
G
C
J
H
SOLDERING FOOTPRINT
0.95 0.95
Production specification
2SC2715
SOT-23
SOT-23
Dim Min Max
A 2.70 3.10
B 1.10 1.50
C 1.0 Typical
D 0.4 Typical
E 0.35 0.48
G 1.80 2.00
H 0.02 0.1
J 0.1 Typical
K 2.20 2.60
All Dimensions in mm
0.90
0.80
2.00
Unit : mm
PACKAGE INFORMATION
Device
Package
Shipping
2SC2715 SOT-23
3000/Tape&Reel
C099
Rev.A
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