2SC2130 Datasheet PDF - JIANGSU CHANGJIANG

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2SC2130
JIANGSU CHANGJIANG

Part Number 2SC2130
Description NPN Transistor
Page 2 Pages


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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
2SC2130 TRANSISTOR (NPN)
FEATURES
z High DC Current Gain
TO – 92
1. EMITTER
2. COLLECTOR
3. BASE
MAXIMUM RATINGS (Ta=25unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
45
40
5
0.8
600
208
150
-55~+150
Unit
V
V
V
A
mW
/W
ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Collector output capacitance
Transition frequency
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
hFE
VCE(sat)
VBE
Cob
fT
Test conditions
IC= 0.1mA,IE=0
IC=10mA,IB=0
IE=0.1mA,IC=0
VCB=35V,IE=0
VCE=25V,IB=0
VEB=5V,IC=0
VCE=1V, IC=100mA
IC=500mA,IB=20mA
VCE=1V, IC=10mA
VCB=10V,IE=0, f=1MHz
VCE=5V,IC=10mA
Min Typ Max Unit
45 V
40 V
5V
0.1 μA
0.1 μA
0.1 μA
100 320
0.5 V
0.8 V
13 pF
100 MHz
CLASSIFICATION OF hFE
RANK
RANGE
O
100-200
Y
160-320
B,Mar,2012



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Typical Characteristics
2SC2130
150
100
50
0
0
Static Characteristic
500uA
450uA
400uA
COMMON
EMITTER
Ta=25
350uA
300uA
250uA
200uA
150uA
100uA
IB=50uA
12345
COLLECTOR-EMITTER VOLTAGE VCE (V)
6
1.2
β=25
V —— I
BEsat
C
1.0
0.8 Ta=25
0.6
0.4 Ta=100
0.2
0.0
0.1
300
1 10 100
COLLECTOR CURRENT IC (mA)
f
T
——
I
C
800
250
200
150
100
50 VCE=5V
Ta=25 oC
0
10 20 30 40 50
COLLECTOR CURRENT IC (mA)
VBE —— IC
800
100
10
1
0.1
0.2
Ta=100 oC
Ta=25
VCE=1V
0.4 0.6 0.8 1.0 1.2
BASE-EMITTER VOLTAGE VBE(V)
500
VCE= 1V
400
300
h —— I
FE C
Ta=100 oC
200
Ta=25 oC
100
0
0.01 0.1 1 10 100
COLLECTOR CURRENT IC (mA)
300
β=25
V —— I
CEsat
C
800
200
100
0
0.1
200
100
Ta=100
Ta=25
1 10 100
COLLECTOR CURRENT IC (mA)
800
C / C ——
ob ib
V /V
CB EB
C
ib
f=1MHz
IE=0 / IC=0
Ta=25 oC
10 Cob
1
0.1
800
700
600
500
400
300
200
100
0
0
1
REVERSE VOLTAGE V (V)
10
P —— T
ca
20
25 50 75 100 125 150
AMBIENT TEMPERATURE Ta ()
B,Mar,2012



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