2SB679 Datasheet PDF - INCHANGE

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2SB679
INCHANGE

Part Number 2SB679
Description Silicon PNP Power Transistor
Page 2 Pages


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INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SB679
DESCRIPTION
·High Power Dissipation-
: PC= 100W(Max.)@TC=25
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -120V(Min.)
·Complement to Type 2SC1079
APPLICATIONS
·Designed for audio power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-120
V
VCEO Collector-Emitter Voltage
VEBO Emitter-Base Voltage
IC Collector Current-Continuous
IE Emitter Current-Continuous
Collector Power Dissipation
PC @TC=25
Tj Junction Temperature
Tstg Storage Temperature
-120
V
-5 V
-12 A
12 A
100 W
150
-65~150
isc Websitewww.iscsemi.cn



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INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SB679
ELECTRICAL CHARACTERISTICS
Tj=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -100mA ;IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -10mA ;IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -10A; IB= -1A
VBE(on) Base-Emitter On Voltage
IC= -10A ; VCE= -5V
ICBO Collector Cutoff Current
VCB= -50V; IE= 0
IEBO Emitter Cutoff Current
VEB= -5V; IC= 0
hFE-1
DC Current Gain
IC= -2A ; VCE= -5V
hFE-2
DC Current Gain
IC= -7A ; VCE= -5V
COB Output Capacitance
fT Current-Gain—Bandwidth Product
VCB= -10V; ftest= 1MHz
IC= -2A ; VCE= -5V
MIN TYP. MAX UNIT
-120
V
-5 V
-3.0 V
-2.5 V
-0.1 mA
-0.1 mA
40 140
15
900 pF
6 MHz
‹ hFE-1 Classifications
RY
40-80
70-140
isc Websitewww.iscsemi.cn



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