2SB539 Datasheet PDF - SavantIC

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2SB539
SavantIC

Part Number 2SB539
Description SILICON POWER TRANSISTOR
Page 3 Pages


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SavantIC Semiconductor
wSwiwl.iDcatoaSnheePt4NU.cPomPower Transistors
Product Specification
2SB539
DESCRIPTION
·With TO-3 package
·High power dissipation
APPLICATIONS
·Power amplifier applications
·Recommended for high-power high-fidelity
audio frequency amplifier output stage
PINNING(see Fig.2)
PIN
DESCRIPTION
1 Base
2 Emitter
3 Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
IE
PC
Tj
Tstg
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Emitter current
Collector power dissipation
Junction temperature
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
-130
-130
-5
-10
10
100
150
-65~150
UNIT
V
V
V
A
A
W



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SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
Product Specification
2SB539
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=-30mA ;IB=0
-130
V
V(BR)EBO Emitter-base breakdown voltage
IE=-1mA ;IC=0
-5
V
VCEsat Collector-emitter saturation voltage IC=-6A; IB=-0.6A
-3.0 V
VBE Base-emitter on voltage
IC=-6A ; VCE=-5V
-2.5 V
ICBO Collector cut-off current
VCB=-130V; IE=0
-0.1 mA
IEBO Emitter cut-off current
VEB=-5V; IC=0
-0.1 mA
hFE DC current gain
IC=-2A ; VCE=-5V
40 200
fT Transition frequency
IC=-1A ; VCE=-5V
8 MHz
2



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SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
PACKAGE OUTLINE
Product Specification
2SB539
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3



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