2SB1509 Datasheet PDF - SavantIC

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2SB1509
SavantIC

Part Number 2SB1509
Description SILICON POWER TRANSISTOR
Page 3 Pages


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SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
DESCRIPTION
·With TO-3PML package
·Low collector saturation voltage
·Complement to type 2SD2282
·Wide area of safe operation
APPLICATIONS
·For use in relay drivers ,high-speed
Inverters,converters
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Product Specification
2SB1509
Fig.1 simplified outline (TO-3PML) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
ICM
PC
Tj
Tstg
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Collector power dissipation
Junction temperature
Storage temperature
Open emitter
Open base
Open collector
Ta=25
TC=25
MAX
-60
-50
-6
-15
-30
3.0
50
150
-55~150
UNIT
V
V
V
A
A
W



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SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-1mA ;RBE=;
V(BR)CBO Collector-base breakdown voltage
IC=-1mA ;IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=-1mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=-8A ;IB=-0.4A
ICBO Collector cut-off current
VCB=-40V; IE=0
IEBO Emitter cut-off current
VEB=-4V; IC=0
hFE-1
DC current gain
IC=-1A ; VCE=-2V
hFE-2
DC current gain
IC=-8A ; VCE=-2V
fT Transition frequency
IC=-1A ; VCE=-5V
Switching times
ton Turn-on time
tstg Storage time
tf Fall time
IC=-2A; IB1=-IB2=-0.2A
RL=10B;VCCC20V
Product Specification
2SB1509
MIN TYP. MAX UNIT
-50 V
-60 V
-6 V
-0.26 -0.5
V
-100 µA
-100 µA
70 280
30
20 MHz
0.2 µs
0.5 µs
0.1 µs
hFE-1 Classifications
QRS
70-140 100-200 140-280
2



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SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
PACKAGE OUTLINE
Product Specification
2SB1509
Fig.2 outline dimensions
3



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