2SB1470 Datasheet PDF - SavantIC

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2SB1470
SavantIC

Part Number 2SB1470
Description SILICON POWER TRANSISTOR
Page 3 Pages


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SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
DESCRIPTION
·With TO-3PL package
·Complement to type 2SD2222
·High DC current gain
·Low collector saturation voltage
·DARLINGTON
APPLICATIONS
·For power amplification
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Product Specification
2SB1470
Fig.1 simplified outline (TO-3PL) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current
ICM Collector current-peak
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
Ta=25
VALUE
-160
-160
-5
-8
-15
120
3.5
150
-55~150
UNIT
V
V
V
A
A
W



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SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
Product Specification
2SB1470
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=-30mA ;IB=0
VCEsat Collector-emitter saturation voltage IC=-7A ;IB=-7mA
VBEsat
Base-emitter saturation voltage
IC=-7A ;IB=-7mA
ICBO Collector cut-off current
VCB=-160V; IE=0
ICEO Collector cut-off current
VCE=-160V; IB=0
IEBO Emitter cut-off current
VEB=-5V; IC=0
hFE-1
DC current gain
IC=-1A ; VCE=-5V
hFE-2
DC current gain
IC=-7A ; VCE=-5V
fT Transition frequency
IC=-0.5A ; VCE=-10V;f=1MHz
Switching times
-160
1000
3500
-3.0
-3.0
-100
-100
-100
V
V
V
µA
µA
µA
20000
20 MHz
ton Turn-on time
ts Storage time
tf Fall time
IC=-7A ;IB1=-IB2=-7mA
VCC=-50V
1.0 µs
1.5 µs
1.2 µs
hFE-2 classifications
QS
3500-10000 7000-20000
2



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SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
PACKAGE OUTLINE
Product Specification
2SB1470
Fig.2 Outline dimensions (unindicated tolerance:±0.50 mm)
3



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