2SB1404 Datasheet PDF - SavantIC

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2SB1404
SavantIC

Part Number 2SB1404
Description SILICON POWER TRANSISTOR
Page 3 Pages


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SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
DESCRIPTION
·With TO-220Fa package
·High DC current gain
·Low collector saturation voltage
·DARLINGTON
APPLICATIONS
·For use in low frequency power
amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Product Specification
2SB1404
Fig.1 simplified outline (TO-220Fa) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
Open emitter
VCEO
Collector -emitter voltage
Open base
VEBO
Emitter-base voltage
Open collector
IC Collector current
ICM Collector current-peak
Ta=25
PC Collector power dissipation
TC=25
Tj Junction temperature
Tstg Storage temperature
VALUE
-120
-120
-7
-3
-6
2
25
150
-55~150
UNIT
V
V
V
A
A
W



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SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-25mA; RBE==
V(BR)CBO Collector-base breakdown voltage
IC=-100µA; IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=-50mA; IC=0
VCEsat-1 Collector-emitter saturation voltage IC=-1.5A ;IB=-3mA
VCEsat-2 Collector-emitter saturation voltage IC=-3A ;IB=-30mA
VBEsat-1 Base-emitter saturation voltage
IC=-1.5A ;IB=-3mA
VBEsat-2 Base-emitter saturation voltage
IC=-3A ;IB=-30mA
ICBO Collector cut-off current
VCB=-100V; IE=0
ICEO Collector cut-off current
VCE=-100V; RBE==
hFE DC current gain
IC=-1.5A ; VCE=-3V
Product Specification
2SB1404
MIN TYP. MAX UNIT
-120
V
-120
V
-7 V
-1.5 V
-3.0 V
-2.0 V
-3.5 V
-10 µA
-10 µA
1000
20000
2



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SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
PACKAGE OUTLINE
Product Specification
2SB1404
Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm)
3



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