2SB1353 Datasheet PDF - INCHANGE

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2SB1353
INCHANGE

Part Number 2SB1353
Description Silicon PNP Power Transistor
Page 2 Pages


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INCHANGE Semiconductor
isc Silicon PNP Power Transistor
DESCRIPTION
·Good Linearity of hFE
· Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -120V(Min)
·Complement to Type 2SD2033
APPLICATIONS
·Designed for use in high voltage driver applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-120
V
VCEO Collector-Emitter Voltage
-120
V
VEBO Emitter-Base Voltage
-5.0 V
IC Collector Current-Continuous
Collector Power Dissipation
@ Ta=25
PC
Collector Power Dissipation
@TC=25
TJ Junction Temperature
Tstg Storage Temperature Range
-1.5 A
1.8
W
20
150
-55~150
Product Specification
2SB1353
isc websitewww.iscsemi.cn
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INCHANGE Semiconductor
isc Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CBO Collector-Base Breakdown Voltage
IC= -0.1mA; IE= 0
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -0.1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.1A
ICBO Collector Cutoff Current
VCB= -120V; IE= 0
IEBO Emitter Cutoff Current
VEB= -5V; IC= 0
hFE DC Current Cain
IC= -0.1A ; VCE= -5V
fT
Current-Gain—Bandwidth Product
IC= -0.1A ; VCE= -5V
hFE Classifications
DEF
60-120 100-200 160-320
Product Specification
2SB1353
MIN TYP. MAX UNIT
-120
V
-120
V
-5 V
-2.0 V
-10 μA
-10 μA
60 320
50 MHz
isc websitewww.iscsemi.cn
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