2SB1353 Datasheet PDF - BLUE ROCKET ELECTRONICS

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2SB1353
BLUE ROCKET ELECTRONICS

Part Number 2SB1353
Description Silicon PNP transistor
Page 6 Pages


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2SB1353(BR3CA1353F)
Rev.C Feb.-2015
DATA SHEET
描述 / Descriptions
TO-220F 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a TO-220F Plastic Package.
特征 / Features
击穿电压高,宽阔的安全工作区,转换频率高,共基极输出电容小。
High VCEO,SOA, High transition frequency and small Cob.
用途 / Applications
用于功率放大。
power amplifier applications.
内部等效电路 / Equivalent Circuit
引脚排列 / Pinning
1 23
PIN1Base
PIN 2Collector
PIN 3Emitter
放大及印章代码 / hFE Classifications & Marking
hFE Classifications
Symbol
hFE Range
D
60120
E
100200
F
160320
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2SB1353(BR3CA1353F)
Rev.C Feb.-2015
极限参数 / Absolute Maximum Ratings(Ta=25)
参数
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Current – Continuous(Pulse)
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符号
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
DATA SHEET
数值
Rating
-120
-120
-5.0
-1.5
-3.0
1.8
150
-55150
单位
Unit
V
V
V
A
A
W
电性能参数 / Electrical Characteristics(Ta=25)
参数
Parameter
Collector to Base Breakdown
Voltage
Collector to Base Breakdown
Voltage
Emitter to Base Breakdown Voltage
符号
Symbol
VCBO
VCEO
VEBO
测试条件
Test Conditions
IC=-50μA
IC=-1.0mA
IE=-50μA
Collector Cut-Off Current
ICBO VCB=-100V
Emitter Cut-Off Current
IEBO VEB=-4.0V
DC Current Gain
Collector to Emitter Saturation
Voltage
Base to Emitter Saturation Voltage
Transition Frequency
Collector output capacitance
hFE VCE=-5.0V
VCE(sat) IC=-1.0A
VBE(sat)
fT
Cob
IC=-1.0A
VCE=-5.0V
f=30MHz
VCB=-10V
f=1.0MHz
IC=-0.1A
IB=-0.1A
IB=-0.1A
IE=0.1A
IE=0
最小值 典型值 最大值 单位
Min Typ Max Unit
-120
V
-120
V
-5.0 V
-1.0 μA
-1.0 μA
60 320
-2.0 V
-1.5 V
50 MHz
30 pF
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2SB1353(BR3CA1353F)
Rev.C Feb.-2015
电参数曲线图 / Electrical Characteristic Curve
DATA SHEET
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2SB1353(BR3CA1353F)
Rev.C Feb.-2015
外形尺寸图 / Package Dimensions
DATA SHEET
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