2SA940 Datasheet PDF - Inchange Semiconductor

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2SA940
Inchange Semiconductor

Part Number 2SA940
Description Silicon PNP Power Transistor
Page 2 Pages


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INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SA940
DESCRIPTION
·Collector-Emitter Breakdown Voltage
: V(BR)CEO= -150V(Min)
·DC Current Gain
: hFE= 40-140@ IC= -0.5A
·Complement to Type 2SC2073
APPLICATIONS
·Designed for use in general purpose power amplifier ,
vertical output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
VCEO Collector-Emitter Voltage
VEBO Emitter-Base Voltage
IC Collector Current-Continuous
ICM Collector Current-Peak
Total Power Dissipation
PC @ TC=25
TJ Junction Temperature
Tstg Storage Temperature Range
-150
V
-150
V
-5 V
-1.5 A
-3.0 A
25 W
150
-55~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX
5.0
UNIT
/W
isc Websitewww.iscsemi.cn
Free Datasheet http://www.datasheet4u.com/



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INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SA940
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -5mA ; IB= 0
-150
V
V(BR)CBO Collector-Base Breakdown Voltage
IC= -1mA ; IE= 0
-150
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -1mA ; IC= 0
-5
V
VCE(sat) Collector-Emitter Saturation Voltage IC= -0.5A; IB=B -50mA
VBE(on) Base-Emitter On Voltage
IC= -0.5A ; VCE= -5V
ICBO Collector Cutoff Current
VCB= -120V ; IE= 0
IEBO Emitter Cutoff Current
VEB= -5V; IC= 0
-1.5 V
-0.85 V
-10 μA
-10 μA
hFE DC Current Gain
IC= -0.5A ; VCE= -10V
40 140
fT
Current-Gain—Bandwidth Product
IC= -0.5A;VCE= -10V;ftest= 1MHz
4
MHz
isc Websitewww.iscsemi.cn
2
Free Datasheet http://www.datasheet4u.com/



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