2SA2029M3T5G Datasheet PDF - ON Semiconductor

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2SA2029M3T5G
ON Semiconductor

Part Number 2SA2029M3T5G
Description PNP Silicon General Purpose Amplifier Transistor
Page 4 Pages


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2SA2029M3T5G
PNP Silicon General
Purpose Amplifier Transistor
This PNP transistor is designed for general purpose amplifier
applications. This device is housed in the SOT−723 package which is
designed for low power surface mount applications, where board
space is at a premium.
Reduces Board Space
High hFE, 210 −460 (Typical)
Low VCE(sat), < 0.5 V
ESD Performance: Human Body Model; u 2000 V,
Machine Model; u 200 V
Available in 4 mm, 8000 Unit Tape & Reel
This is a Pb−Free Device
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Value
Unit
Collector−Base Voltage
V(BR)CBO
Collector−Emitter Voltage
V(BR)CEO
Emitter−Base Voltage
V(BR)EBO
Collector Current − Continuous
IC
THERMAL CHARACTERISTICS
−60
−50
−6.0
−100
Vdc
Vdc
Vdc
mAdc
Rating
Symbol Max Unit
Power Dissipation (Note 1)
PD 265 mW
Junction Temperature
TJ 150 °C
Storage Temperature Range
Tstg
−55 ~ + 150
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Device mounted on a FR−4 glass epoxy printed circuit board using the
minimum recommended footprint.
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PNP GENERAL
PURPOSE AMPLIFIER
TRANSISTORS
SURFACE MOUNT
COLLECTOR
3
1
BASE
2
EMITTER
MARKING
DIAGRAM
3
SOT−723
CASE 631AA
2
1
F9 M
F9 = Specific Device Code
M = Date Code
ORDERING INFORMATION
Device
Package
Shipping
2SA2029M3T5G SOT−723 8000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2004
November, 2004 − Rev. 1
1
Publication Order Number:
2SA2029M3/D



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2SA2029M3T5G
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic
Symbol Min Typ Max Unit
Collector−Base Breakdown Voltage (IC = −50 mAdc, IE = 0)
V(BR)CBO
−60
− Vdc
Collector−Emitter Breakdown Voltage (IC = −1.0 mAdc, IB = 0)
V(BR)CEO
−50
− Vdc
Emitter−Base Breakdown Voltage (IE = −50 mAdc, IE = 0)
V(BR)EBO
−6.0
− Vdc
Collector−Base Cutoff Current (VCB = −30 Vdc, IE = 0)
ICBO − − −0.5 nA
Emitter−Base Cutoff Current (VEB = −7.0 Vdc, IB = 0)
IEBO − − −0.1 mA
Collector−Emitter Saturation Voltage (Note 2)
(IC = −50 mAdc, IB = −5.0 mAdc)
VCE(sat)
Vdc
− −0.5
DC Current Gain (Note 2)
(VCE = −6.0 Vdc, IC = −1.0 mAdc)
hFE
120 − 560
Transition Frequency
(VCE = −12 Vdc, IC = −2.0 mAdc, f = 30 MHz)
fT MHz
− 140 −
Output Capacitance (VCB = −12 Vdc, IE = 0 Adc, f = 1.0 MHz)
2. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%.
COB
− 3.5 − pF
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2SA2029M3T5G
TYPICAL ELECTRICAL CHARACTERISTICS
TA = 25°C
120
1000
TA = 75°C
TA = 25°C
VCE = 10 V
90
60
30
0
0
2
1.5
300 mA
250
200
150
100
IB = 50 mA
3 6 9 12
VCE, COLLECTOR VOLTAGE (V)
Figure 1. IC − VCE
15
TA = 25°C
1
0.5
00.01 0.1 1 10
IB, BASE CURRENT (mA)
Figure 3. Collector Saturation Region
100
TA = − 25°C
100
10
0.1
1 10 100
IC, COLLECTOR CURRENT (mA)
Figure 2. DC Current Gain
900
800
700
600
500
400
300
200
100
0
0.2 0.5
1
TA = 25°C
VCE = 5 V
5 10 20 40 60 80 100 150 200
IC, COLLECTOR CURRENT (mA)
Figure 4. On Voltage
13 14
12 12
11 10
10 8
96
84
72
60
0 1 2 3 4 0 10 20 30 40
VEB (V)
VCB (V)
Figure 5. Capacitance
Figure 6. Capacitance
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2SA2029M3T5G
PACKAGE DIMENSIONS
SOT−723
CASE 631AA−01
ISSUE B
−X−
D
b1
3
12
−Y−
E
A
L HE
b 2X
e 0.08 (0.0032) X Y
C
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
MILLIMETERS
INCHES
DIM MIN NOM MAX MIN NOM MAX
A 0.45 0.50 0.55 0.018 0.020 0.022
b 0.15 0.21 0.27 0.0059 0.0083 0.0106
b1 0.25 0.31 0.37 0.010 0.012 0.015
C 0.07 0.12 0.17 0.0028 0.0047 0.0067
D 1.15 1.20 1.25 0.045 0.047 0.049
E 0.75 0.80 0.85 0.03 0.032 0.034
e 0.40 BSC
0.016 BSC
H E 1.15 1.20 1.25 0.045 0.047 0.049
L 0.15 0.20 0.25 0.0059 0.0079 0.0098
SOLDERING FOOTPRINT*
0.40
0.0157
0.40
0.0157
1.0
0.039
0.40
0.0157
0.40
0.0157
0.40
0.0157
SCALE 20:1
SOT−723
ǒ mm Ǔ
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 61312, Phoenix, Arizona 85082−1312 USA
Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada
Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
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Japan: ON Semiconductor, Japan Customer Focus Center
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051
Phone: 81−3−5773−3850
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ON Semiconductor Website: http://onsemi.com
Order Literature: http://www.onsemi.com/litorder
For additional information, please contact your
local Sales Representative.
2SA2029M3/D



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