2SA1179 Datasheet PDF - Jiangsu Changjiang Electronics

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2SA1179
Jiangsu Changjiang Electronics

Part Number 2SA1179
Description TRANSISTOR
Page 1 Pages


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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
2SA1179 TRANSISTOR (PNP)
FEATURES
. High breakdown voltage
MARKING: M
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS* TA=25unless otherwise noted
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
-55 V
VCEO
Collector-Emitter Voltage
-50 V
VEBO
Emitter-Base Voltage
-5 V
IC Collector Current -Continuous
-150
mA
PD Total Device Dissipation
200 mW
TJ, Tstg
Junction and Storage Temperature
-55-125
*These ratings are limiting values above which the serviceability of any semiconductor device may be
impaired.
ELECTRICAL CHARACTERISTICS(Tamb=25unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base -emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol Test conditions
V(BR)CBO Ic=-10u A,IE=0
V(BR)CEO Ic=-1mA,IB=0
V(BR)EBO IE=-10 u A,IC=0
ICBO
VCB=-35V,IE=0
IEBO VEB=-4V,IC=0
hFE VCE=-6V,IC=-1mA
VCE(sat) IC=-50mA,IB=-5mA
VBE(sat) IC=-50mA,IB=-5mA
fT VCE=-6V,IC=-10mA
Cob VCB=-6V,IE=0,f=1MHz
MIN TYP MAX UNIT
-55 V
-50 V
-5 V
-0.1 u A
-0.1 u A
200 400
-0.5 V
-1.0 V
180 MHz
4 pF



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