2NS04Z Datasheet PDF - ST Microelectronics

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2NS04Z
ST Microelectronics

Part Number 2NS04Z
Description STP62NS04Z
Page 6 Pages


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STP62NS04Z
N-CHANNEL CLAMPED 12m- 40A TO-220
FULLY PROTECTED MESH OVERLAY™ MOSFET
ADVANCED DATA
TYPE
VDSS
RDS(on)
ID
STP62NS04Z
CLAMPED < 0.014 40 A (*)
s TYPICAL RDS(on) = 0.012
s 100% AVALANCHE TESTED
s LOW CAPACITANCE AND GATE CHARGE
s 175°C MAXIMUM JUNCTION TEMPERATURE
DESCRIPTION
This fully clamped MOSFET is produced by using
the latest advanced Company’s Mesh Overlay pro-
cess which is based on a novel strip layout. The in-
herent benefits of the new technology coupled with
the extra clamping capabilities make this product
particularly suitable for the harshest operation con-
ditions such as those encountered in the automotive
environment .Any other application requiring extra
ruggedness is also recommended.
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s ABS,SOLENOID DRIVERS
s POWER TOOLS
ORDERING INFORMATION
SALES TYPE
MARKING
STP62NS04Z
P62NS04Z
PACKAGE
TO-220
PACKAGING
TUBE
November 2003
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STP62NS04Z
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDG
Drain-gate Voltage
VGS Gate- source Voltage
ID (*)
Drain Current (continuous) at TC = 25°C
ID (*)
Drain Current (continuous) at TC = 100°C
IDG Drain Gate Current (continuous)
IGS Gate Source Current (continuous)
IDM ( ) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
EAS (2) Single Pulse Avalanche Energy
VESD
ESD(HBM-C=100 pF, R=1.5 KΩ)
Tstg Storage Temperature
Tj Operating Junction Temperature
(•)Pulse width limited by safe operating area
(*) Current Limited by Package
(1) ISD 40A, di/dt 100A/µs, VDD V(BR)DSS, Tj TJMAX.
(2) Starting Tj = 25 °C, ID = 20A, VDD = 20 V
THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max
Rthj-amb Thermal Resistance Junction-ambient Max
Tl Maximum Lead Temperature For Soldering Purpose
(1.6mm from case, for 10sec)
Value
CLAMPED
CLAMPED
CLAMPED
40
40
± 50
± 50
160
110
0.74
5
500
8
– 55 to 175
1.36
62.5
300
ELECTRICAL CHARACTERISTICS (TCASE = 25°C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max.
V(BR)DSS Clamped Voltage
ID = 1 mA, VGS = 0
33
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = 16 V
TBD
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ±10 V
TBD
VGSS
Gate-Source
Breakdown Voltage
IGS = ±100 µA
18
Unit
V
V
V
A
A
mA
mA
A
W
W/°C
V/ns
mJ
kV
°C
°C/W
°C/W
°C
Unit
V
µA
µA
V
ON (1)
Symbol
VGS(th)
RDS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 20 A
Min.
2
Typ.
12
Max.
4
14
Unit
V
m
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STP62NS04Z
ELECTRICAL CHARACTERISTICS (CONTINUED)
DYNAMIC
Symbol
gfs (1)
Ciss
Coss
Crss
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS = 15 V ,ID = 18 A
VDS = 25 V, f = 1 MHz, VGS = 0
Min.
Typ.
17.5
1330
420
135
Max.
Unit
S
pF
pF
pF
SWITCHING ON
Symbol
Parameter
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
SWITCHING OFF
Symbol
Parameter
tr(Voff)
tf
tc
td
Off Voltage Rise Time
Fall Time
Cross-over Time
Turn Off Delay Time
Test Conditions
VDD = 20 V, ID = 40 A,
VGS = 10 V
Test Conditions
VCLAMP = 30 V, ID = 40 A,
RG = 4.7 Ω, VGS = 10 V
(see test circuit, Figure 5)
Min.
Typ.
34
10
11.5
Max.
47
Unit
nC
nC
nC
Min.
Typ.
30
54
90
36
Max.
Unit
ns
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD Source-drain Current
ISDM (2) Source-drain Current (pulsed)
VSD (1) Forward On Voltage
ISD = 40 A, VGS = 0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 40 A, di/dt = 100 A/µs
VDD = 20 V, Tj = 150°C
(see test circuit, Figure 5)
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Min.
Typ.
45
65
2.9
Max.
40
160
1.5
Unit
A
A
V
ns
nC
A
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STP62NS04Z
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuit For
Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
4/6
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