2N70Z Datasheet PDF - Unisonic Technologies


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2N70Z
Unisonic Technologies

Part Number 2N70Z
Description N-CHANNEL POWER MOSFET
Page 6 Pages

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UNISONIC TECHNOLOGIES CO., LTD
2N70Z
2A, 700V N-CHANNEL
POWER MOSFET
Power MOSFET
„ DESCRIPTION
The UTC 2N70Z is a high voltage MOSFET designed to have
better characteristics, such as fast switching time, low gate charge,
low on-state resistance and high rugged avalanche characteristics.
This power MOSFET is usually used in the high speed switching
applications of power supplies, PWM motor controls, high efficient
DC to DC converters and bridge circuits.
„ FEATURES
* RDS(ON) = 6.3@VGS = 10V
* Ultra Low gate charge (typical 8.1nC)
* Low reverse transfer capacitance (CRSS = typical 5.0 pF)
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
„ SYMBOL
„ ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
Package
2N70ZL-TM3-T
2N70ZG-TM3-T
TO-251
Note: Pin Assignment: G: Gate D: Drain S: Source
Pin Assignment
123
GDS
Packing
Tube
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2N70Z
Power MOSFET
„ ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
700 V
Gate-Source Voltage
VGSS
±20 V
Avalanche Current (Note 2)
Drain Current
Continuous
Pulsed (Note 2)
IAR
ID
IDM
2.0 A
2.0 A
8.0 A
Avalanche Energy
Single Pulsed (Note 3)
Repetitive (Note 2)
EAS
EAR
140 mJ
2.8 mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5 V/ns
Power Dissipation
Junction Temperature
PD 30 W
TJ
+150
°С
Operating Temperature
TOPR
-55 ~ +150
°С
Storage Temperature
TSTG
-55 ~ +150
°С
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by TJ
3. L=45mH, IAS=2.0A, VDD=50V, RG=25 , Starting TJ = 25°C
4. ISD2.0A, di/dt200A/μs, VDDBVDSS, Starting TJ = 25°C
„ THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θJA
θJc
RATINGS
110
4.24
„ ELECTRICAL CHARACTERISTICS (TJ =25°С, unless otherwise specified)
UNIT
°С/W
°С/W
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS VGS = 0V, ID = 250μA
Drain-Source Leakage Current
IDSS VDS = 700V, VGS = 0V
Gate-Source Leakage Current
Forward
Reverse
IGSS
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
Breakdown Voltage Temperature
Coefficient
BVDSS/TJ ID = 250 μA, Referenced to 25°C
700
0.4
V
10 μA
5 μA
-5 μA
V/°С
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
VGS(TH)
RDS(ON)
VDS = VGS, ID = 250μA
VGS = 10V, ID =1A
2.0 4.0
5.0 6.3
V
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS =25V, VGS =0V, f =1MHz
270 350
38 50
57
pF
pF
pF
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2N70Z
Power MOSFET
„ ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD (ON)
Turn-On Rise Time
Turn-Off Delay Time
tR
tD(OFF)
VDD =350V, ID =2.0A, RG=25
(Note 1, 2)
Turn-Off Fall Time
tF
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
QG
QGS
QGD
VDS=560V, VGS=10V, ID=2.0A
(Note 1, 2)
DRAIN-SOURCE DIODE CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD VGS = 0 V, ISD = 2.0 A
Continuous Drain-Source Current
ISD
Pulsed Drain-Source Current
Reverse Recovery Time
Reverse Recovery Charge
ISM
tRR VGS = 0 V, ISD = 2.0A
QRR di/dt = 100 A/μs (Note1)
Notes: 1. Pulse Test: Pulse width300μs, Duty cycle2%
2. Essentially independent of operating temperature
MIN TYP MAX UNIT
30 ns
80 ns
50 ns
70 ns
8.1 11 nC
1.7 nC
4.4 nC
1.4
2.0
8.0
260
1.09
V
A
A
ns
μC
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2N70Z
„ TEST CIRCUITS AND WAVEFORMS
D.U.T.
+
-
+
VDS
-
L
Power MOSFET
RG
VGS
Same Type
as D.U.T.
Driver
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
VDD
VGS
(Driver)
ISD
(D.U.T.)
VDS
(D.U.T.)
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
P.W.
Period
D=
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDD
Body Diode
Forward Voltage Drop
Fig. 1B Peak Diode Recovery dv/dt Waveforms
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