2N7002KB Datasheet PDF - Silikron Semiconductor


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2N7002KB
Silikron Semiconductor

Part Number 2N7002KB
Description MOSFET
Page 7 Pages

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Main Product Characteristics:
VDSS
RDS(on)
60V
2Ω(max.)
ID 0.3A
SOT-23
Features and Benefits:
Advanced MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
ESD Rating1000V HBM
150operating temperature
2N7002KB
Marking and pin
Assignment
Schematic diagram
Description:
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with
high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable
device for use in power switching application and a wide variety of other applications.
Absolute max Rating:
Symbol
ID @ TC = 25°C
IDM
PD @TC = 25°C
VDS
VGS
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Drain-Source Voltage
Gate-to-Source Voltage
Operating Junction and Storage Temperature Range
Max.
0.3
1.2
0.63
60
±20
-55 to +150
Thermal Resistance
Symbol
Characterizes
Typ.
Max.
RθJA
Junction-to-ambient (
200
Units
A
W
V
V
°C
Units
/W
©Silikron Semiconductor CO., LTD.
2012.04.20
www.silikron.com
Version: 1.0
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Electrical Characterizes @TA=25unless otherwise specified
Symbol
V(BR)DSS
RDS(on)
VGS(th)
IDSS
IGSS
td(on)
td(off)
Ciss
Coss
Crss
Parameter
Drain-to-Source breakdown voltage
Static Drain-to-Source on-resistance
Gate threshold voltage
Drain-to-Source leakage current
Gate-to-Source forward leakage
Turn-on delay time
Turn-Off delay time
Input capacitance
Output capacitance
Reverse transfer capacitance
Min.
60
1
Typ.
1.5
40
16.6
9.5
Max.
2
3
2.5
1
±100
±10
25
35
Units
V
Ω
V
μA
nA
uA
ns
pF
2N7002KB
Conditions
VGS = 0V, ID = 250μA
VGS=10V, ID=0.5A
VGS=5V, ID=0.05A
VDS = VGS, ID = 250μA
VDS = 60V,VGS = 0V
VGS=±5V,VDS=0V
VGS=±20V,VDS=0V
VGS=10V, VDS=30V,
ID=0.2A,RGEN=10Ω
VGS = 0V
VDS = 25V
ƒ = 1MHz
Source-Drain Ratings and Characteristics
Symbol
IS
ISM
VSD
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Min.
Typ.
Max.
0.3
— — 1.2
— — 1.3
Units
A
A
V
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
IS=0.2A, VGS=0V
©Silikron Semiconductor CO., LTD.
2012.04.20
www.silikron.com
Version: 1.0
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Test circuits and Waveforms
2N7002KB
Switch Waveforms:
Notes:
The maximum current rating is limited by bond-wires.
Repetitive rating; pulse width limited by max. junction temperature.
The power dissipation PD is based on max. junction temperature, using junction-to-case thermal
resistance.
The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
These curves are based on the junction-to-case thermal impedence which is measured with the
device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C.
©Silikron Semiconductor CO., LTD.
2012.04.20
www.silikron.com
Version: 1.0
page 3 of 7



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Typical electrical and thermal characteristics
2N7002KB
Figure 1. Power Dissipation Vs. Case Temperature
Figure 2.Typical Capacitance Vs. Drain-to-Source
Voltage
Figure3. Maximum Effective Transient Thermal Impedance, Junction-to-Case
©Silikron Semiconductor CO., LTD.
2012.04.20
www.silikron.com
Version: 1.0
page 4 of 7




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