2N7002K Datasheet PDF - Silikron Semiconductor


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2N7002K
Silikron Semiconductor

Part Number 2N7002K
Description MOSFET
Page 7 Pages

2N7002K datasheet pdf
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GENERAL FEATURES
VDS = 60V,ID = 0.3A
RDS(ON) < 3.5Ω @ VGS=5V
RDS(ON) < 3Ω @ VGS=10V
ESD Rating1000V HBM
High Power and current handing capability
Lead free product is acquired
Surface Mount Package
APPLICATION
Direct Logic-Level Interface: TTL/CMOS
Drivers: Relays, Solenoids, Lamps,
Hammers,Display, Memories, Transistors, etc.
Battery Operated Systems
Solid-State Relays
2N7002K
Schematic diagram
Marking and pin Assignment
SOT-23 top view
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package Reel Size
S72K
2N7002K
SOT-23
Ø180mm
Tape width
8 mm
Quantity
3000 units
ABSOLUTE MAXIMUM RATINGS(TA=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous@ Current-Pulsed (Note 1)
ID
ID (70)
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
60
±20
0.3
0.26
0.8
0.43
-55 To 175
Unit
V
V
A
A
W
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
350 /W
ELECTRICAL CHARACTERISTICS (TA=25unless otherwise noted)
Parameter
Symbol
Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
Min Typ Max Unit
60 V
©Silikron Semiconductor CO.,LTD.
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2N7002K
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate-Source Breakdown Voltage
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 4)
Turn-on Delay Time
Turn-Off Delay Time
Total Gate Charge
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 3)
IDSS
IGSS
BVGSO
VGS(th)
RDS(ON)
gFS
Clss
Coss
Crss
td(on)
td(off)
Qg
VSD
VDS=60V,VGS=0V
VGS=±5V,VDS=0V
VGS=±10V,VDS=0V
VGS=±20V,VDS=0V
VDS=0V, IG=±250uA
VDS=VGS,ID=250μA
VGS=10V, ID=0.5A
VGS=5V, ID=0.05A
VDS=10V,ID=0.2A
±20
1
0.08
VDS=25V,VGS=0V,
F=1.0MHz
30
6
3
VDD=30V,VGS=10V,
RGEN=10ΩRL=150Ω
ID=0.2A
VDS=10V,ID=0.25A,VGS=4.5V
0.4
VGS=0V,IS=0.2A
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.
1
100
150
10
2.5
3
3.5
25
35
0.6
1.3
μA
nA
nA
uA
V
V
Ω
S
PF
PF
PF
nS
nS
nC
V
©Silikron Semiconductor CO.,LTD.
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2N7002K
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
Vdd
Rl
Vin
D Vout
Vgs Rgen
G
S
td(on)
VOUT
VIN
10%
ton
tr
td(off)
toff
tf
90%
INVERTED
10%
90%
10%
50%
90%
50%
PULSE WIDTH
Figure 1:Switching Test Circuit
Figure 2:Switching Waveforms
TJ-Junction Temperature()
Figure 3 Power Dissipation
TJ-Junction Temperature()
Figure 4 Drain Current
Vds Drain-Source Voltage (V)
Figure 5 Output CHARACTERISTICS
ID- Drain Current (A)
Figure 6 Drain-Source On-Resistance
©Silikron Semiconductor CO.,LTD.
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2N7002K
Vgs Gate-Source Voltage (V)
Figure 7 Transfer Characteristics
TJ-Junction Temperature()
Figure 8 Drain-Source On-Resistance
Vgs Gate-Source Voltage (V)
Figure 9 Rdson vs Vgs
Vds Drain-Source Voltage (V)
Figure 10 Capacitance vs Vds
Qg Gate Charge (nC)
Figure 11 Gate Charge
©Silikron Semiconductor CO.,LTD.
Vsd Source-Drain Voltage (V)
Figure 12 Source- Drain Diode Forward
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