2N7002 Datasheet PDF - Philips


www.Datasheet-PDF.com

2N7002
Philips

Part Number 2N7002
Description N-channel vertical D-MOS transistor
Page 12 Pages

2N7002 datasheet pdf
View PDF for PC
2N7002 pdf
View PDF for Mobile


No Preview Available !

DISCRETE SEMICONDUCTORS
DATA SHEET
2N7002
N-channel vertical D-MOS
transistor
Product specification
File under Discrete Semiconductors, SC13b
April 1995



No Preview Available !

Philips Semiconductors
N-channel vertical D-MOS transistor
Product specification
2N7002
FEATURES
Direct interface to C-MOS, TTL,
etc.
High-speed switching
No secondary breakdown.
DESCRIPTION
N-channel enhancement mode
vertical D-MOS transistor in a SOT23
envelope. It is designed for use as a
Surface Mounted Device (SMD) in
thin and thick-film circuits, with
applications in relay, high-speed and
line transformer drivers.
PINNING - SOT23
PIN DESCRIPTION
1 gate
2 source
3 drain
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VDS
ID
RDS(on)
drain-source voltage
drain current
drain-source on-resistance
VGS(th)
gate-source threshold
voltage
CONDITIONS
DC value
ID = 500 mA
VGS = 10 V
ID = 1 mA
VGS = VDS
MAX. UNIT
60 V
180 mA
5
3V
PIN CONFIGURATION
ook, halfpage
3
handbook, 2 columns
d
1
Top view
2
MSB003
g
MBB076 - 1 s
Marking code: 702
Fig.1 Simplified outline and symbol.
April 1995
2



No Preview Available !

Philips Semiconductors
N-channel vertical D-MOS transistor
Product specification
2N7002
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VDS
±VGSO
ID
IDM
Ptot
drain-source voltage
gate-source voltage
drain current
drain current
total power dissipation
Tstg storage temperature range
Tj junction temperature
open drain
DC value
peak value
Tamb = 25 °C
(note 1)
(note 2)
Notes
1. Mounted on a ceramic substrate measuring 10 × 8 × 0.7 mm.
2. Mounted on a printed circuit board.
THERMAL RESISTANCE
SYMBOL
Rth j-a
PARAMETER
from junction to ambient
CONDITIONS
note 1
note 2
Notes
1. Mounted on a ceramic substrate measuring 10 × 8 × 0.7 mm.
2. Mounted on a printed circuit board.
MIN. MAX. UNIT
60 V
40 V
180 mA
800 mA
300 mW
250 mW
65 150 °C
150 °C
VALUE
430
500
UNIT
K/W
K/W
April 1995
3



No Preview Available !

Philips Semiconductors
N-channel vertical D-MOS transistor
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
V(BR)DSS drain-source breakdown voltage
IDSS drain-source leakage current
±IGSS
gate-source leakage current
VGS(th)
gate-source threshold voltage
RDS(on)
drain-source on-resistance
Yfs
Ciss
Coss
Crss
transfer admittance
input capacitance
output capacitance
feedback capacitance
Switching times (see Figs 2 and 3)
ton turn-on time
toff turn-off time
Product specification
2N7002
CONDITIONS
ID = 10 µA
VGS = 0
VDS = 48 V
VGS = 0
VDS = 0
±VGS = 15 V
ID = 1 mA
VGS = VDS
ID = 500 mA
VGS = 10 V
ID = 75 mA
VGS = 4.5 V
ID = 200 mA
VDS = 10 V
VDS = 10 V
VGS = 0
f = 1 MHz
VDS = 10 V
VGS = 0
f = 1 MHz
VDS = 10 V
VGS = 0
f = 1 MHz
MIN. TYP. MAX. UNIT
60 90
V
−−1
µA
− − 10 nA
0.8
3
V
3.5 5
− − 5.3
100 200
mS
25 40 pF
22 30 pF
6 10 pF
ID = 200 mA
VDD = 50 V
VGS = 0 to 10 V
ID = 200 mA
VDD = 50 V
VGS = 0 to 10 V
− − 10 ns
− − 15 ns
April 1995
4




2N7002 datasheet pdf
Download PDF
2N7002 pdf
View PDF for Mobile


Similiar Datasheets : 2N70 2N70-M 2N7000 2N7000 2N7000 2N7000 2N7000 2N7000 2N7000 2N7000 2N7000 2N7000 2N7000 2N7000 2N7000 2N7000 2N7000 2N7000 2N7000 2N7000-G 2N7000A 2N7000BU 2N7000CSM 2N7000G 2N7000K 2N7000K 2N7000K 2N7000KL 2N7000P 2N7000TA

Index :   0   1   2   3   4   5   6   7   8   9   A   B   C   D   E   F   G   H   I   J   K   L   M   N   O   P   Q   R   S   T   U   V   W   X   Y   Z   

This is a individually operated, non profit site. If this site is good enough to show, please introduce this site to others.
Since 2010   ::   HOME   ::   Privacy Policy + Contact