2N6277 Datasheet PDF - Inchange Semiconductor


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2N6277
Inchange Semiconductor

Part Number 2N6277
Description Silicon NPN Power Transistor
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2N6277
DESCRIPTION
·High Switching Speed
·High DC Current Gain-
: hFE= 30-120@ IC= 20A
·Low Collector Saturation Voltage-
: VCE(sat)=1.0V(Min.)@ IC= 20A
·Complement to Type 2N6379
APPLICATIONS
·Designed for use in industrial-military power amplifier and
switching circuit applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
VCEO
VEBO
IC
Collector- Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
180 V
150 V
6V
50 A
ICM Collector Current-Peak
100 A
IB Base Current-Continuous
20 A
PC
Collector Power Dissipation @TC=25
250
W
TJ Junction Temperature
200
Tstg Storage Temperature Range
-65~200
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal Resistance,Junction to Case
MAX UNIT
0.7 /W
isc websitewww.iscsemi.cn
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2N6277
ELECTRICAL CHARACTERISTICS
Tj=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 20A; IB= 2A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 50A; IB= 10A
VBE(sat)-1 Base-Emitter Saturation Voltage
IC= 20A; IB= 2A
VBE(sat)-2 Base-Emitter Saturation Voltage
IC= 50A; IB= 10A
VBE(on) Base-Emitter On Voltage
IC= 20A; VCE= 4V
ICEO Collector Cutoff Current
ICEX Collector Cutoff Current
IEBO Emitter Cutoff Current
VCE= 75V; IB= 0
VCE= 180V; VBE(off)=1.5V
VCE= 180V; VBE(off)=1.5V; TC=150
VEB= 6V; IC= 0
hFE-1
DC Current Gain
IC= 1A; VCE= 4V
hFE-2
DC Current Gain
IC= 20A; VCE= 4V
hFE-3
DC Current Gain
IC= 50A; VCE= 4V
fT Current-Gain—Bandwidth Product IC= 1A; VCE= 10V
COB Output Capacitance
IE= 0; VCB= 10V; ftest= 0.1MHz
Switching times
tr Rise Time
ts Storage Time
tf Fall Time
VCC= 80V, IC= 20A, IB1= 2A, VBE(off)= 5V
VCC= 80V, IC= 20A, IB1= -IB2= 2A
MIN MAX UNIT
150 V
1.0 V
3.0 V
1.8 V
3.5 V
1.8 V
50 μA
10 μA
1.0 mA
0.1 mA
50
30 120
10
30 MHz
600 pF
0.35 μs
0.80 μs
0.25 μs
isc websitewww.iscsemi.cn
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