2N6274 Datasheet PDF - Motorola


www.Datasheet-PDF.com

2N6274
Motorola

Part Number 2N6274
Description High Power NPN SIlicon Transistor
Page 6 Pages

2N6274 datasheet pdf
View PDF for PC
2N6274 pdf
View PDF for Mobile


No Preview Available !

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
High-Power NPN Silicon
Transistors
. . . designed for use in industrial–military power amplifer and switching circuit
applications.
High Collector Emitter Sustaining —
VCEO(sus) = 100 Vdc (Min) — 2N6274
VCEO(sus) = 120 Vdc (Min) — 2N6275
VCEO(sus) = 150 Vdc (Min) — 2N6277
High DC Current Gain —
hFE = 30–120 @ IC = 20 Adc
hFE = 10 (Min) @ IC = 50 Adc
Low Collector–Emitter Saturation Voltage —
VCE(sat) = 1.0 Vdc (Max) @ IC = 20 Adc
Fast Switching Times @ IC 20 Adc
tr = 0.35 µs (Max)
ts = 0.8 µs (Max)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎtf = 0.25 µs (Max)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎComplement to 2N6377–79
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS(1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Base Voltage
Collector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current — Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎPeak
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Device Dissipation @ TC = 25_C
Derate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTemperature Range
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTIC
Characteristic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Case
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(1) Indicates JEDEC Registered Data.
Symbol
VCB
VCEO
VEB
IC
IB
PD
TJ, Tstg
2N6274 2N6275 2N6277
120 140 180
100 120 150
6.0
50
100
20
250
1.43
– 65 to + 200
Symbol
θJC
Max
0.7
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/_C
_C
Unit
_C/W
250
200
150
100
50
0
0 25 50 75 100 125 150 175 200
TC, CASE TEMPERATURE (°C)
Figure 1. Power Derating
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 7
©MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data
Order this document
by 2N6274/D
2N6274
2N6275
2N6277*
*Motorola Preferred Device
50 AMPERE
POWER TRANSISTORS
NPN SILICON
100, 120, 140, 150 VOLTS
250 WATTS
CASE 197A–05
TO–204AE
(TO–3)
1



No Preview Available !

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ2N6274 2N6275 2N6277
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ*ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
Symbol
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Sustaining Voltage (1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎIC = 50 mAdc, IB = 0)
2N6274
2N6275
2N6277
VCEO(sus)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Cutoff Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCE = 50 Vdc, IB = 0)
(VCE = 60 Vdc, IB = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCE = 75 Vdc, IB = 0)
2N6274
2N6275
2N6277
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Cutoff Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCE = Rated VCB, VEB(off) = 1.5 Vdc)
(VCE = Rated VCB, VEB(off) = 1.5 Vdc, TC = 150_C)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter Cutoff Current (VBE = 6.0 Vdc, IC = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎON CHARACTERISTICS (1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDC Current Gain
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎIC = 1.0 Adc, VCE = 4.0 Vdc)
IC = 20 Adc, VCE = 4.0 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎIC = 50 Adc, VCE = 4.0 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎColiector–Emitter Saturation Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎIC = 20 Adc, IB = 2.0 Adc)
IC = 50 Adc, IB = 10 Adc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase–Emitter Saturation Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎIC = 20 Adc, IB = 2.0 Adc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎIC = 50 Adc, IB = 10 Adc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase–Emitter On Voltage (IC = 20 Adc, VCE = 4.0 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDYNAMIC CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCurrent–Gain Bandwidth Product (2) (IC = 1.0 Adc, VCE = 10 Vdc, ftest = 10 MHz)
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎSWITCHING CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRise Time
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCC = 80 Vdc, IC = 20 Adc, IB1 = 2.0 Adc, VBE(off) = 5.0 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎStorage Time
(VCC = 80 Vdc, IC = 20 Adc, IB1 = IB2 = 2.0 Adc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎFall Time
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCC = 80 Vdc, IC = 20 Adc, IB1 = IB2 = 2.0 Adc)
ICEO
ICEX
IEBO
hFE
VCE (sat)
VBE(sat)
VBE(on)
fT
Cob
tr
ts
tf
Min
100
120
150
50
30
10
30
Max Unit
Vdc
µAdc
50
50
50
10 µAdc
1.0 mAdc
100 µAdc
120
Vdc
1.0
3.0
Vdc
1.8
3.5
1.8 Vdc
— MHz
600 pF
0.35 µs
0.80 µs
0.25 µs
* Indicates JEDEC Registered Data.
v v(1) Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%.
(2) fT = |hfe| ftest
30 µs
+ 21.5 V
0
– 18.5 V
tr, tf 10 ns
DUTY CYCLE = 0.5%
RB
10 OHMS
VCC
+ 80 V
RC
4.0 OHMS
1N3879
– 4.0 V
NOTE: For information of Figures 3 and 6 , RB and RC were
NOTE: varied to obtain desired test conditions.
Figure 2. Switching Time Test Circuit
2.0
1.0
0.7
0.5 td @ VBE(off) = 5.0 V
0.3
0.2
IC/IB = 10
TJ = 25°C
0.1
0.07 tr @ VCC = 80 V
0.05
0.03
0.02
0.5 0.7
1.0 2.0 3.0 5.0 7.0 10
20
IC, COLLECTOR CURRENT (AMP)
30
Figure 3. Turn–On Time
50
2 Motorola Bipolar Power Transistor Device Data



No Preview Available !

1.0
0.7 D = 0.5
0.5
0.3 0.2
0.2
0.1
0.1 0.05
0.07 0.02
0.05
0.03
0.02
0.01
0.02
0.05
0.01
SINGLE PULSE
0.1 0.2 0.5
2N6274 2N6275 2N6277
θJC(t) = r(t) θJC
P(pk)
θJC = 0.7°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) θJC(t)
t1
t2
DUTY CYCLE, D = t1/t2
1.0 2.0
5.0 10
t, TIME (ms)
20
50 100 200
500
Figure 4. Thermal Response
1000 2000
100
50
20
10
5.0
2.0
1.0
0.5
0.2
0.1
0.05
0.02
0.012.0
TJ = 200°C dc 5.0 ms
1.0 ms 100 µs
SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMALLY LIMITED
@ TC = 25°C (SINGLE PULSE) 2N6274
CURVES APPLY BELOW
2N6275
RATED V(BR)CEO
2N6277
3.0 5.0 7.0 10
20 30 50 70 100
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
200
Figure 5. Active–Region Safe Operating Area
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 200_C; TC is
variable depending on conditions. Second breakdown pulse
vlimits are valid for duty cycles to 10% provided TJ(pk)
200_C. TJ(pk) may be calculated from the data in Fig-
ure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
5.0
3.0
2.0 ts
1.0
0.7
0.5
0.3 tf @ VCC = 80 V
0.2
IB1 = IB2
IC/IB = 10
TJ = 25°C
0.1
0.07
0.050.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (AMP)
Figure 6. Turn–Off Time
50
10,000
7000
5000
3000
2000
TJ = 25°C
Cib
1000
700
500
300 Cob
200
100
0.1 0.2
0.5 1.0 2.0 5.0 10 20
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitance
50 100
Motorola Bipolar Power Transistor Device Data
3



No Preview Available !

2N6274 2N6275 2N6277
1000
700
500
300 TJ = 150°C
200
100 + 25°C
70 – 55°C
50
30
20
VCE = 4.0 V
VCE = 10 V
10
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (AMP)
Figure 8. DC Current Gain
50
4.0
3.6 IC = 5.0 A 10 A
3.2 2.0 A
30 A TJ = 25°C
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0
IB, BASE CURRENT (AMPS)
5.0 10
Figure 9. Collector Saturation Region
2.8
TJ = 25°C
2.4
2.0
1.6
1.2
VBE(sat) @ IC/IB = 10
0.8
VBE(sat) @ IC/IB = 4.0 V
0.4
VCE(sat)
@ IC/IB = 10
0
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (AMP)
Figure 10. “On” Voltages
50
+ 12
++ 10
*APPLIES FOR IC/IB <
hFE @ VCE
4
4.0 V
+ 8.0
– 55°C TO + 25°C
+ 6.0 + 25°C TO + 150°C
+ 4.0
+ 2.0
*θVC for VCE(sat)
0
θVB for VBE
– 2.0
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (AMP)
Figure 11. Temperature Coefficients
50
103
102 TJ = 150°C
VCE = 100 V
100°C
101
25°C
100
IC = ICES
10–1
REVERSE
FORWARD
10– 2
– 0.1 0 + 0.1 + 0.2 + 0.3
VBE, BASE-EMITTER VOLTAGE (VOLTS)
Figure 12. Collector Cut–Off Region
+ 0.4
102
TJ = 150°C
101
100°C
100
VCE = 100 V
10–1
25°C
10– 2
REVERSE
10–3
– 0.1 0
FORWARD
+ 0.1 + 0.2
+ 0.3
VBE, BASE-EMITTER VOLTAGE (VOLTS)
Figure 13. Base Cut–off Region
+ 0.4
4 Motorola Bipolar Power Transistor Device Data




2N6274 datasheet pdf
Download PDF
2N6274 pdf
View PDF for Mobile


Similiar Datasheets : 2N6200 2N6200 2N6202 2N6203 2N6204 2N6211 2N6211 2N6211 2N6211 2N6212 2N6212 2N6212 2N6212 2N6213 2N6213 2N6213 2N6213 2N6214 2N6215 2N6216 2N6216 2N6217 2N6226 2N6226 2N6226 2N6226 2N6227 2N6227 2N6227 2N6227

Index :   0   1   2   3   4   5   6   7   8   9   A   B   C   D   E   F   G   H   I   J   K   L   M   N   O   P   Q   R   S   T   U   V   W   X   Y   Z   

This is a individually operated, non profit site. If this site is good enough to show, please introduce this site to others.
Since 2010   ::   HOME   ::   Privacy Policy + Contact