2N6274 Datasheet PDF - Inchange Semiconductor


www.Datasheet-PDF.com

2N6274
Inchange Semiconductor

Part Number 2N6274
Description Silicon NPN Power Transistor
Page 2 Pages

2N6274 datasheet pdf
View PDF for PC
2N6274 pdf
View PDF for Mobile


No Preview Available !

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2N6274
DESCRIPTION
·High Switching Speed
·High DC Current Gain-
: hFE= 30-120@ IC= 20A
·Low Collector Saturation Voltage-
: VCE(sat)=1.0V(Min.)@ IC= 20A
·Complement to Type 2N6377
APPLICATIONS
·Designed for use in industrial-military power amplifier and
switching circuit applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector- Base Voltage
120 V
VCEO
Collector-Emitter Voltage
100 V
VEBO
Emitter-Base Voltage
6V
IC Collector Current-Continuous
50 A
ICM Collector Current-Peak
100 A
IBB Base Current-Continuous
20 A
PC Collector Power Dissipation @TC=25250 W
TJ Junction Temperature
200
Tstg Storage Temperature Range
-65~200
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
0.7 /W
isc Websitewww.iscsemi.cn



No Preview Available !

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2N6274
ELECTRICAL CHARACTERISTICS
Tj=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 20A; IB= 2A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 50A; IB= 10A
VBE(sat)-1 Base-Emitter Saturation Voltage
IC= 20A; IB= 2A
VBE(sat)-2 Base-Emitter Saturation Voltage
IC= 50A; IB= 10A
VBE(on) Base-Emitter On Voltage
IC= 20A; VCE= 4V
ICEO Collector Cutoff Current
ICEX Collector Cutoff Current
IEBO Emitter Cutoff Current
VCE= 50V; IB=B 0
VCE= 120V; VBE(off)=1.5V
VCE= 120V; VBE(off)=1.5V; TC=150
VEB= 6V; IC= 0
hFE-1
DC Current Gain
IC= 1A; VCE= 4V
hFE-2
DC Current Gain
IC= 20A; VCE= 4V
hFE-3
DC Current Gain
IC= 50A; VCE= 4V
fT Current-Gain—Bandwidth Product IC= 1A; VCE= 10V
COB Output Capacitance
Switching times
IE= 0; VCB= 10V; ftest= 0.1MHz
tr Rise Time
ts Storage Time
tf Fall Time
VCC= 80V, IC= 20A, IB1= 2A, VBE(off)= 5V
VCC= 80V, IC= 20A, IB1= -IB2= 2A
MIN MAX UNIT
100 V
1.0 V
3.0 V
1.8 V
3.5 V
1.8 V
50 μA
10 μA
1.0 mA
0.1 mA
50
30 120
10
30 MHz
600 pF
0.35 μs
0.80 μs
0.25 μs
isc Websitewww.iscsemi.cn
2




2N6274 datasheet pdf
Download PDF
2N6274 pdf
View PDF for Mobile


Similiar Datasheets : 2N6200 2N6200 2N6202 2N6203 2N6204 2N6211 2N6211 2N6211 2N6211 2N6212 2N6212 2N6212 2N6213 2N6213 2N6213 2N6213 2N6215 2N6216 2N6216 2N6217 2N6226 2N6226 2N6226 2N6226 2N6227 2N6227 2N6227 2N6227 2N6228 2N6228

Index :   0   1   2   3   4   5   6   7   8   9   A   B   C   D   E   F   G   H   I   J   K   L   M   N   O   P   Q   R   S   T   U   V   W   X   Y   Z   

This is a individually operated, non profit site. If this site is good enough to show, please introduce this site to others.
Since 2010   ::   HOME   ::   Privacy Policy + Contact