2N5685 Datasheet PDF - Seme LAB


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2N5685
Seme LAB

Part Number 2N5685
Description NPN SILICON POWER TRANSISTOR
Page 2 Pages

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2N5685
MECHANICAL DATA
Dimensions in mm(inches)
25.15 (0.99)
26.67 (1.05)
10.67 (0.42)
11.18 (0.44)
6.35 (0.25)
9.15 (0.36)
1.52 (0.06)
3.43 (0.135)
12
3
(case)
3.84 (0.151)
4.09 (0.161)
7.92 (0.312)
12.70 (0.50)
TO–3(TO204AE)
PIN 1 — Base PIN 2 — Emitter
.
Case is Collector
NPN SILICON POWER
TRANSISTOR
FEATURES
• HIGH CURRENT
• LOW SATURATION VOLTAGES
• HIGH RELIABILITY
APPLICATIONS
• POWER SWITCHING CIRCUITS
• POWER AMPLIFIER APPLICATIONS
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VCBO
Collector – Base Voltage (IE = 0)
VCEO
Collector – Emitter Voltage (IB = 0)
VEBO
Emitter – Base Voltage (IC = 0)
IC Collector Current
IB Base Current
Ptot Total Power Dissipation at Tcase 25°C
Derate above 25°C
Tstg, Storage Temperature
Tj Junction Temperature
60V
60V
5.0V
50A
15A
300W
1.715 W/°C
–65 to 200°C
200°C
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Document Number 6519
Issue 1



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2N5685
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
Collector - Emitter Breakdown
VCEO(BR)* Voltage
IC = 200mA
60
ICEO
ICEX
ICBO
IEBO
VCE(sat)*
VBE(sat)*
Collector Cut-off Current
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
Collector – Emitter Saturation
Voltage
Base – Emitter
Saturation Voltage
VCE = 30V
VCE = 60V
VCB = 60V
VBE = 5V
IC = 25A
IC = 50A
IC = 25A
IB = 0
VBE = 1.5V
TCASE =150°C
IE = 0
IC = 0
IB = 2.5A
IB = 10A
IB = 2.5A
VBE(on)*
hFE*
hfe
Ccbo
Emitter Base on Voltage
DC Current Gain
Small Signal Current Gain
Collector Base Capacitance
IC = 25A
VCE = 2V
IC = 25A
VCE = 2V
IC = 50A
VCE = 5V
IC = 10A VCE = 5V f = 1.0 kHz
VCB = 10V
IE = 0
f =0.1 MHz
15
5
15
Current Gain Bandwidth
fT product
IC = 5A VCE = 10V f = 1.0 MHz
2
Typ.
Max. Unit
V
1.0 mA
2
mA
10
2 mA
5 mA
1.0
V
5.0
2V
2V
60
1200 pF
MHz
THERMAL CHARACTERISTICS
RθJC
Thermal Resistance Junction to Case
* Pulse test tp = 300μs , δ = 1.5 %
Max
0.584
°C/W
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Document Number 6519
Issue 1




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