2N5583 Datasheet PDF - Motorola

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2N5583
Motorola

Part Number 2N5583
Description HIGH FREQUENCY TRANSISTOR
Page 3 Pages


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2N5583
JAN, JTX, JTXV AVAILABLE
CASE 79-02, STYLE 1
TO-39 (TO-205AD)
HIGH FREQUENCY TRANSISTOR
PNP SILICON
fc
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current Continuous
@Total Device Dissipation T/\ = 25°C
Derate above 25°C
@Total Device Dissipation Tc = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
vCEO
VCBO
v EBO
"C
PD
Pd
TJ< Tstg
Value
30
30
3.0
500
1.0
5.71
5.0
28.6
-65 to +200
Unit
Vdc
Vdc
Vdc
mAdc
Watt
mW/°C
Watts
mW/°C
°C
ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(l)
dC = 10 mAdc, Ib = 0)
Collector-Base Breakdown Voltage
dC = 10 nAdc, Ie = 0)
Emitter-Base Breakdown Voltage
(IE = 100 ^Adc, \c = 0)
Collector Cutoff Current
(Vcb = 20 Vdc, = 0)
Emitter Cutoff Current
(Veb = 2.0 Vdc, lc = 0)
ON CHARACTERISTICS
DC Current Gaind)
dC = 40 mAdc, VC e = 2.0 Vdc)
dC = 100 mAdc, Vqe = 2.0 Vdc)
dC = 300 mAdc, Vqe = 5.0 Vdc)
Collector-Emitter Saturation VoltageO)
dC = 100 mAdc, Ib = 10 mAdc)
Base-Emitter On Voltaged)
dC = 100 mAdc, Vce = 2.0 Vdc)
SMALL SIGNAL CHARACTERISTICS
Current-Gain Bandwidth Product
dC = 40 mAdc, VC e = 10 Vdc, f = 100 MHz)
dC = 100 mAdc, Vce = 10 Vdc, f = 100 MHz)
Collector-Base Capacitance
(Vcb = 15 Vdc, El = 0, f = 100 kHz)
Emitter-Base Capacitance
(Veb = 0.5 Vdc, cl = 0, f = 100 kHz)
Collector Base Time Constant
dC = 50 mAdc, VC b = 10 Vdc, f = 63.6 MHz)
SWITCHING CHARACTERISTICS (FIGURE 10)
Turn-On Delay Time
Rise Time
Fall Time
<VCC = 31.4 Vdc, Cl = 150 mAdc,
RC - 160 Ohms, Re - 26.6 Ohms)
(1) Pulse Test: Pulse Width =s 300 /us. Duty Cycle as 2.0%.
Symbol
v(BR)CEO
v (BR)CBO
v (BR)EBO
ICBO
'EBO
30
30
3.0
hFE
v CE(sat)
v BE(on)
20
25
15
n
Ccb
Ceb
rb'C c
td
V
tf
1000
1300
-
Typ
40
40
22
0.6
0.84
1300
1500
2.5
18
8.0
1.0
2.1
1.8
Max
-
50
0.5
100
0.8
1.8
-
5.0
35
Vdc
Vdc
Vdc
nAdc
/xAdc
Vdc
Vdc
MHz
pF
PF
ps
ns
ns
ns
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2N5583
^
FIGURE 1 - DC CURRENT GAIN
,,»-'
II 1
M-_>j
25°C P VCE s 2.0 Vdc
UIII 1 1 1
-55°C 9 VCE* 20 Vdc
^J
\
\
>>
N
FIGURE 2 - COLLECTOR SATURATION REGION
[Mil
Ta » 25°C
1
\
lc = 1( mA
\
\ 100 mA
200 mA
3.0 5.0 7.0 10
20 30
SO 70 100
IC. COLLECTOR CURRENT (mA)
200 300
—\
2.4
20
s>
o
> 1.6
C9
5o '-2
>
-h>' 0.8
0.4
0.1 0.2
FIGURE 3 - "ON" VOLTAGES
ii T
t
T
t
i
T
1
t
u II
t
T
Vt E(s,,) » \l* 5 to 10 It
_L
1
1
1
1
i^
1
\
VCEIsat) '^ " 5.0
E » 2.0 Vd
\
tkf;t;ts-4Jh
\
II
1---
'
KV"
'
I
/
/
//
1/1/
-- vce sat|w
is
11!
tfiFr
0.5 1.0 20
50 10 20
...
50 100 200 500
IC, COLLECTOR CURRENT (mA)
20
10
S 7.0
5w
3 3.0
2.0
FIGURE 5 - CAPACITANCES
|
1
;- Ch
CCb
1.0
0.1
0.2 0.3 0.S
1.0 2.0 3.0 S.O
10
REVERSE VOLTAGE (VOLTS)
20 30 40
0.2 0.5 1.0 2.0
5.0 10
20
50 100 200
IB. BASE CURRENT (MAI
FIGURE 4 - COLLECTOR CURRENT vanui BASE VOLTAGE
= =10k
5k VCE=15V
= =|
TA = 75°C
2.0
1.0
0.5
0.2
0.1
-0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1
0.1 0.2 0.3 0.4
Reverse Bias
Vbe, BASE EMITTER VOLTAGE (VOLTS)
0.5 0.6 0.7
Forward Bias
FIGURE 6 - TEMPERATURE COEFFICIENTS
1 1 r—r-r--
OVCforVCEIsat)
/
// yTA"100to175°C
..^*<:-
Ta--55" to 100°C
8Vb*otV BE
T A" -5 5" to 1 75°C
L_ I
1.0
3.0 5.0
10
30 50
100
IC. COLLECTOR CURRENT (mA)
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2N5583
FIGURE 7 - CURRENT-GAIN-BANDWIDTH PRODUCT
"S 3000
11
f 100 MHj
\
VCE = 1 )Vd c
S V-
FIGURE 8 - COLLECTOR-BASE TIME CONSTANT
20 30
SO 70 100
IC. COLLECTOR CURRENT (mA)
200 300
10 20 30 40 50 60 70 80 90 100
IC. COLLECTOR CURRENT (mA)
1
SO
v
30
20
FIGURE 9 - SWITCHING TIMES
T-a <> *
1
t r evcc = 3i.4\lit
10
1 7.0
50
Hi
- 3.0
2.0
1.0
0.7
0.S
tf evCC - 31.4 Vdi
td
J
^»-> £\
30 50
100 200 300
IC. COLLECTOR CURRENT (mA)
FIGURE 10 - SWITCHING TIMES TEST I
v cc *30V
-u- >Q-r
V in = -5.0 Vdc T
PW- 100 ns 4-
Duty Cycle - 2.0%
I
I.
IC Rc
RE vcc
mA Ohms Ohms Volts
50 526
80 34.4
150 160
26.6 31.4
300 78
13.3 30.6
500 16.5 8.0 30.3
2N5829 For Specifications see 2N4957 Data.
7-48



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