2N3055H Datasheet PDF - USHA

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2N3055H
USHA

Part Number 2N3055H
Description Silicon Power Transistor
Page 3 Pages


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Silicon Power Transistor
2N3055H
Technical Data
Typical Applications : These devices are designed for general purpose switching
and amplifier applications.
Specification Fetaures :
F Complementary NPN Silicon Power Transistor
F 15 Amp / 100 V device in TO-204AA [ TO-3 ] package
F 115 Watts device
F Excellent safe operating area
Symbol
Parameters / Conditions
Ratings
Maximum Ratings :
V CEO
Collector- Emitter Voltage
V CER
V CB
V EB
IC
IB
Collector- Emitter Voltage
Collector - Base Voltage
Emitter Base Voltage
Collector Current – Continuos
Base Current
100 Vdc
70 Vdc
100 Vdc
7 Vdc
15 Adc
7 Adc



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Thermal Characteristics :
R thjc
PD
Tj & T Stg
Thermal resistance junction to case
Total Power Dissipation @ Tc = 25 °C
Derate above 25 °C
Operating and Storage Junction Temperature Range
1.52 °C/W
115 Watta
0.657 W /°C
-65 °C ….+ 200 °C
ELECTRICAL CHARACTERISTICS :
[ Tc = 25 °C unless otherwise noted ]
Characteristic
Symbol Min Typ Max Unit
Off Characteristics : [ Pulse Test : Pulse width = 300 µs , Duty Cycle 2 % ]
Collector – Emitter Sustaining
Voltage [ Ic = 200 mAdc , IB = 0 ]
Collector – Emitter Sustaining
Voltage [ Ic = 200 mAdc , RBE =
100 Ohms ]
Collector Cutoff Current [ VCE =
30 Vdc , IB = 0 ]
Collector Cutoff Current
[ VCE = 100 Vdc , VBE(off) = 1.5
Vdc ]
[ VCE = 100 V, VBE(off) = 1.5 Vdc ,
Tc = 150 °C ]
Emitter Base Leakage
[ VEB = 7 Vdc , Ic = 0 ]
VCEX(sus)
VCER(sus)
ICEO
ICEX
IEBO
60
70
Vdc
Vdc
0.7 mAdc
1 mAdc
5
5 mAdc
On Characteristics : [ Pulse Test : Pulse width = 300 µs , Duty Cycle 2 % ]
DC Current Gain
[ Ic = 4 Adc , VCE = 4 Vdc ]
[ Ic = 10 Adc , VCE = 4 Vdc ]
Collector-Emitter
Saturation
Voltage
[ Ic = 4 Adc , IB = 400 mAdc ]
[ Ic = 10 Adc , IB = 3.3 Adc ]
Base-Emitter on Voltage
[ Ic = 4 Adc , VCE = 4 Vdc ]
hFE
VCE(sat)
VBE(on)
20
5
70
Vdc
1.1
3
Vdc
1.5



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Dynamic Characteristics :
Current Gain – Bandwidth Product
[ IC = 0.5 Adc , VCE = 10 Vdc , f =
1 MHz ]
Small signal current gain
[ IC = 1 Adc , VCE = 4 Vdc , f = 1
KHz ]
Small signal current gain cutoff
frequency
[ IC = 1 Adc , VCE = 4 Vdc , f = 1
KHz ]
fT
hfe
fhfe
Second Breakdown Characteristics :
Second Breakdown Collector
Current with Base Forward Biased
t = 1 s [non-repetitive ] , VCE = 40
Vdc
IS/b
2.5
15
10
2.87
MHz
120
KHz
Adc



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