2N3055H Datasheet PDF - Multicomp

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2N3055H
Multicomp

Part Number 2N3055H
Description 15A Power Transistors
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2N3055H
15A Power Transistors
Features:
The 2N3055H is a Silicon power base transistor for high power audio, series-
pass power supplies, disk-head positioners and other linear application. These
devices can also be used in power switching circuits such as converters or
inverters.
Higher safe operating area than 2N3055 at VCE >40V.
Low saturation voltages.
High power dissipation capability.
Pin 1. Base
2. Emitter
Collector(Case)
Dimensions Minimum Maximum
A
38.75
39.96
B
19.28
22.23
C 7.96 9.28
D
11.18
12.19
E
25.20
26.67
F 0.92 1.09
G 1.38 1.62
H
29.90
30.40
I
16.64
17.30
J 3.88 4.36
K
10.67
11.18
Dimensions : Millimetres
NPN
2N3055H
15 Ampere
NPN Silicon Transistors
60 Volts
115 Watts
TO-3
Maximum Ratings
Characteristic
Collector-Emitter Voltage
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
Base Current
Total Power Dissipation at TC = 25°C
Derate above 25°C
Operating and Storage Junction Temperature Range
Symbol
VCEO
VCER
VCBO
VEBO
IC
IB
PD
TJ, TSTG
Rating
60
70
100
7.0
15
7.0
115
0.657
-65 to +200
Unit
V
A
W
W/°C
°C
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2N3055H
15A Power Transistors
Thermal Characteristics
Characteristic
Thermal Resistance Junction to Case
Figure 1 - Power Derating
Symbol
Rθjc
Maximum
1.52
Unit
°C/W
TC, Temperature (°C)
Electrical Characteristics (TC = 25°C unless otherwise notes)
Characteristic
Symbol
Minimum
OFF Characteristics (1)
Collector-Emitter Sustaining Voltage
(IC = 200mA, IB = 0)
Collector-Emitter Sustaining Voltage
(IC = 200mA, RBE = 100)
Collector-Emitter Sustaining Voltage
(IC = 100mA, VBE(off) = 1.5V)
Collector Cut off Current
(VCE = 30V, IB = 0)
Collector Cut off Current
(VCE = 100V, VBE(off) = 1.5V)
(VCE = 100V, VBE(off) = 1.5V, TC = 150°C)
Emitter Cut off Current
(VEB = 7.0V, IC = 0)
ON Characteristics
DC Current Gain
(IC = 4.0A, VCE = 4.0V)
(IC = 10A, VCE = 4.0V)
Collector-Emitter Saturation Voltage
(IC = 4.0A, IB = 0.4A)
(IC = 10A, IB = 3.3A)
Base-Emitter on Voltage
(IC = 4.0A, VCE = 4.0V)
VCEO(sus)
VCER(sus)
VCEX(sus)
ICEO
ICEX
IEBO
60
70
90
-
-
-
hFE
VCE(sat)
VBE(on)
20
5.0
-
-
Maximum
-
-
-
0.7
1.0
5.0
5.0
70
1.1
8.0
1.8
Unit
V
mA
-
V
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2N3055H
15A Power Transistors
Characteristic
Second Breakdown
Second Breakdown Collector Current with Base Forward
Based (t = 1s (non-repetitive), VCE = 60V)
Dynamic Characteristics
Current Gain-Bandwidth Product (2)
(IC = 1.0A, VCE = 4.0V)
Small-Signal Current Gain
(IC = 1.0A, VCE = 4.0V, f = 1KHz)
(1) Pulse Test: Pulse Width = 300µs, Duty Cycle 2.0%
(2) fT = hfe • ftest
Symbol
Minimum
Maximum
Unit
IS/B 800 - KHz
fT 800 - KHz
hfe 10
-
-
Specifications
IC(av)
maximum
(A)
VCEO
maximum
(V)
15 60
hFE
minimum
at IC = 4A
20
Ptot
at 25°C
(W)
115
Package
TO-3
Type
NPN
Part Number
2N3055H
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2N3055H
15A Power Transistors
Notes:
International Sales Offices:
AUSTRALIA – Farnell InOne
Tel No: ++ 61 2 9645 8888
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++ 44 8701 202 530
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For enquiries from all other markets
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http://www.cpc.co.uk
Disclaimer This data sheet and its contents (the "Information") belong to the Premier Farnell Group (the "Group") or are licensed to it. No licence is granted for the use of it other than for information purposes
in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change without notice and replaces all data sheets previously supplied.
The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any error in or omission from it or for any use made of it. Users of this data
sheet should check for themselves the Information and the suitability of the products for their purpose and not make any assumptions based on information included or omitted. Liability for loss or damage
resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the Group was aware of the possibility of such loss or damage arising) is excluded.
This will not operate to limit or restrict the Group's liability for death or personal injury resulting from its negligence. Multicomp is the registered trademark of the Group. © Premier Farnell plc 2004.
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