2N3055H Datasheet PDF - Inchange Semiconductor

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2N3055H
Inchange Semiconductor

Part Number 2N3055H
Description Silicon NPN Power Transistor
Page 2 Pages


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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2N3055H
DESCRIPTION
·Excellent Safe Operating Area
·DC Current Gain-hFE=20-70@IC = 4A
·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.1 V(Max)@ IC = 4A
APPLICATIONS
·Designed for general-purpose switching and amplifier
Applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100 V
VCER
Collector-Emitter Voltage
70 V
VCEO Collector-Emitter Voltage
100 V
VEBO
Emitter-Base Voltage
7V
IC Collector Current-Continuous
15 A
IB Base Current
7A
PC Collector Power Dissipation@TC=25115
W
TJ Junction Temperature
200
Tstg Storage Temperature
-65~200
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX
1.52
UNIT
/W
isc Websitewww.iscsemi.cn
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2N3055H
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC=200mA ; IB=0
VCER(SUS) Collector-Emitter Sustaining Voltage IC=200mA ; RBE=100Ω
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 3.3A
VBE(on) Base-Emitter On Voltage
IC= 4A ; VCE= 4V
ICEO Collector Cutoff Current
ICEX Collector Cutoff Current
IEBO Emitter Cutoff Current
VCE= 30V; IB=0
VCE= 100V; VBE(off)= 1.5V
VCE= 100V; VBE(off)= 1.5V,TC=150
VEB= 7.0V; IC=0
hFE-1
DC Current Gain
IC= 4A ; VCE= 4V
hFE-2
Is/b
fT
DC Current Gain
Second Breakdown Collector
Current with Base Forward Biased
Current Gain-Bandwidth Product
IC= 10A ; VCE= 4V
VCE= 40V,t= 1.0s,Nonrepetitive
IC= 0.5A ; VCE= 10V;f=1.0MHz
MIN MAX UNIT
100 V
70 V
1.1 V
3.0 V
1.5 V
0.7 mA
1.0
5.0
mA
5.0 mA
20 70
5.0
2.87 A
2.5 MHz
isc Websitewww.iscsemi.cn
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