2N2102 Datasheet PDF - STMicroelectronics

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2N2102
STMicroelectronics

Part Number 2N2102
Description EPITAXIAL PLANAR NPN
Page 4 Pages


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® 2N2102
EPITAXIAL PLANAR NPN
s GENERAL PURPOSE AMPLIFIER AND
SWITCH
DESCRIPTION
The 2N2102 is a silicon Planar Epitaxial NPN
)transistor in Jedec TO-39 metal case. It is
t(sintended for a wide variety of small-signall and
cmedium power applications in military and
Produindustrial equipments.
TO-39
- ObsoleteINTERNAL SCHEMATIC DIAGRAM
Obsolete Product(s)ABSOLUTE MAXIMUM RATINGS
Symbol
VCBO
VCEO
VCER
VEBO
IC
Ptot
Tstg
Tj
Parameter
Collector-Base Voltage (IE = 0)
Collector-Emitter Voltage (IB = 0)
Collector-Emitter Voltage (RBE 10)
Emitter-Base Voltage (IC = 0)
Collector Current
Total Dissipation at Tamb 25 oC
at TC 25 oC
Storage Temperature
Max. Operating Junction Temperature
Value
120
65
80
7
1
1
5
-65 to 175
175
Unit
V
V
V
V
A
W
W
oC
oC
December 2002
1/4

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