2N2102 Datasheet PDF - STMicroelectronics

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2N2102
STMicroelectronics

Part Number 2N2102
Description EPITAXIAL PLANAR NPN
Page 4 Pages


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® 2N2102
EPITAXIAL PLANAR NPN
s GENERAL PURPOSE AMPLIFIER AND
SWITCH
DESCRIPTION
The 2N2102 is a silicon Planar Epitaxial NPN
)transistor in Jedec TO-39 metal case. It is
t(sintended for a wide variety of small-signall and
cmedium power applications in military and
Produindustrial equipments.
TO-39
- ObsoleteINTERNAL SCHEMATIC DIAGRAM
Obsolete Product(s)ABSOLUTE MAXIMUM RATINGS
Symbol
VCBO
VCEO
VCER
VEBO
IC
Ptot
Tstg
Tj
Parameter
Collector-Base Voltage (IE = 0)
Collector-Emitter Voltage (IB = 0)
Collector-Emitter Voltage (RBE 10)
Emitter-Base Voltage (IC = 0)
Collector Current
Total Dissipation at Tamb 25 oC
at TC 25 oC
Storage Temperature
Max. Operating Junction Temperature
Value
120
65
80
7
1
1
5
-65 to 175
175
Unit
V
V
V
V
A
W
W
oC
oC
December 2002
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2N2102
THERMAL DATA
Rthj-case Thermal Resistance Junction-Case
Rthj-amb Thermal Resistance Junction-Ambient
Max
Max
30 oC/W
150 oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
ICBO
Collector Cut-off
Current (IE = 0)
VCB = 60 V
VCB = 60 V
TC = 150 oC
2 nA
2 µA
IEBO Emitter Cut-off Current VEB = 5 V
5 nA
(IC = 0)
V(BR)CBO Collector-Base
)Breakdown Voltage
t(s(IE = 0)
IC = 100 µA
120 V
cVCEO(sus)Collector-Emitter
uSustaining Voltage
d(IB = 0)
IC = 30 mA
65 V
roVCE(sat)Collector-Emitter
PSaturation Voltage
IC = 150 mA
IB = 15 mA
0.5 V
teVBE(sat)Base-Emitter
Saturation Voltage
IC = 150 mA
IB = 15 mA
1.1 V
- ObsolehFEDC Current Gain
IC = 10 µA
IC = 100 µA
IC = 10 mA
IC = 150 mA
IC = 500 mA
IC = 1 A
VCE = 10 V
VCE = 10 V
VCE = 10 V
VCE = 10 V
VCE = 10 V
VCE = 10 V
10
20
35
40
25
10
120
t(s)hfeHigh Frequency
Current Gain
IC = 50 mA
f = 20 MHz
VCE = 10 V
6
ducNF Noise Figure
IC = 300 µA VCE = 10 V f = 1 KHz
BW = 1 Hz
Rg = 510
8 dB
roCCBO
Collector-Base
Capacitance
IE = 0 VCB = 10 V f = 1MHz
15 pF
te PCEBO
Emitter-Base
Capacitance
IC = 0 VEB = 0.5 V
ObsolePulsed: Pulse duration = 300 µs, duty cycle 1 %
f = 1MHz
80 pF
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2N2102
TO-39 MECHANICAL DATA
DIM.
MIN.
mm
TYP.
MAX.
MIN.
inch
TYP.
MAX.
A 12.7
0.500
B 0.49 0.019
)D
ct(sE
duF
ProG 5.08
leteH
soI
- ObL
lete Product(s)G
bsoI
OH
6.6
8.5
9.4
0.200
1.2
0.9
45o (typ.)
0.260
0.334
0.370
0.047
0.035
DA
L
P008B
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2N2102
Obsolete Product(s) - Obsolete Product(s)
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 2002 STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco -
Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.
http://www.st.com
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