2N2102 Datasheet PDF - Comset Semiconductor

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2N2102
Comset Semiconductor

Part Number 2N2102
Description Medium Power Amplifier & Switch
Page 3 Pages

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NPN 2N2102
MEDIUM POWER AMPLIFIER & SWITCH
The 2N2102 is a silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case.
They are intended for a wide variety of small-signall and medium power applications
in military and industrial equipments.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VCEO
VCBO
VCER
VEBO
IC
PD
Collector-Emitter Voltage (IB = 0)
Collector-Base Voltage (IE = 0)
Collector-Emitter Voltage (RBE = 10 )
Emitter-Base Voltage
Collector Current
Total Power Dissipation
www.DataSheet.net/
TJ Junction Temperature
TStg Storage Temperature range
Tamb= 25°C
Tcase= 25°C
Value
65
120
80
7
1
1
5
-65 to 200
THERMAL CHARACTERISTICS
Symbol
Ratings
RthJ-c
Rthj-a
Thermal Resistance, Junction-case
thermal resistance from junction to ambient in free air
Value
35
175
Unit
V
V
V
V
A
W
°C
Unit
°C/ W
COMSET SEMICONDUCTORS
1/3
Datasheet pdf - http://www.DataSheet4U.co.kr/

2N2102 datasheet pdf
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