2MBI1200U4G-170 Datasheet PDF - Fuji Electric

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2MBI1200U4G-170
Fuji Electric

Part Number 2MBI1200U4G-170
Description IGBT Module
Page 6 Pages


2MBI1200U4G-170 datasheet pdf
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2MBI1200U4G-170
IGBT MODULE (U series)
1700V / 1200A / 2 in one package
IGBT Modules
Features
High speed switching
Voltage drive
Low Inductance module structure
Applications
Inverter for Motor Drive
AC and DC Servo Drive Amplifier
Uninterruptible Power Supply
Industrial machines, such as Welding machines
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at Tc=25°C unless otherwise specified)
Items
Collector-Emitter voltage
Gate-Emitter voltage
Symbols
VCES
VGES
Ic
Conditions
Continuous
Collector current
Icp 1ms
-Ic
-Ic pulse
1ms
Collector power dissipation
Pc 1 device
Junction temperature
Tj
Storage temperature
Tstg
Isolation voltage between terminal and copper base (*1) Viso
AC : 1min.
Mounting
Screw torque (*2)
Main Terminals
Sense Terminals
Tc=25°C
Tc=80°C
Tc=25°C
Tc=80°C
Maximum ratings
1700
±20
1600
1200
3200
2400
1200
2400
6250
150
-40 to +125
3400
5.75
10
2.5
Units
V
V
A
W
°C
VAC
Nm
Note *1: All terminals should be connected together when isolation test will be done.
Note *2: Recommendable value : Mounting : 4.25-5.75 Nm (M6), Main Terminals : 8-10 Nm (M8), Sense Terminals : 1.7-2.5 Nm (M4)
Electrical characteristics (at Tj= 25°C unless otherwise specified)
Items
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Turn-on time
Turn-off time
Forward on voltage
Reverse recovery time
Lead resistance, terminal-chip (*3)
Symbols Conditions
ICES VGE = 0V, VCE = 1700V
IGES VCE = 0V, VGE = ±20V
VGE (th)
VCE = 20V, IC = 1200mA
VCE (sat)
(main terminal) VGE = 15V
VCE (sat)
IC = 1200A
(chip)
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Cies
VCE = 10V, VGE = 0V, f = 1MHz
ton
tr
toff
VCC = 900V, IC = 1200A,
VGE = ±15V, Tj = 125°C,
Rgon = 4.7Ω, Rgoff = 1.2Ω
tf
VF
(main terminal) VGE = 0V
VF IF = 1200A
(chip)
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
trr IF = 1200A
R lead
Characteristics
min. typ. max.
- - 1.0
- - 1600
5.5 6.5 7.5
- 2.57 2.76
- 2.97 -
- 2.25 2.40
- 2.65 -
- 112 -
- 3.10 -
- 1.25 -
- 1.45 -
- 0.25 -
- 2.12 2.51
- 2.32 -
- 1.80 2.15
- 2.00 -
- 0.45 -
- 0.27 -
Units
mA
nA
V
V
nF
µs
V
µs
mΩ
Note *3: Biggest internal terminal resistance among arm.
Thermal resistance characteristics
Items
Thermal resistance (1device)
Contact thermal resistance (1device)
Symbols
Rth(j-c)
Rth(c-f)
Conditions
IGBT
FWD
with Thermal Compound (*4)
Characteristics
min. typ. max.
- - 0.020
- - 0.033
- 0.006 -
Units
°C/W
Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound.
1



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2MBI1200U4G-170
Characteristics (Representative)
Collector current vs. Collector-Emitter voltage (typ.)
Tj=25°C, chip
2800
2400
VGE=20V 15V 12V
2000
1600
1200
10V
800
400
0
0.0
8V
1.0 2.0 3.0 4.0
Collector-Emitter voltage : VCE [V]
5.0
IGBT Modules
Collector current vs. Collector-Emitter voltage (typ.)
Tj=125°C, chip
2800
2400
VGE=20V 15V
12V
2000
1600
1200
10V
800
400 8V
0
0.0 1.0 2.0 3.0 4.0 5.0
Collector-Emitter voltage : VCE [V]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
VGE=+15V, chip
2800
2400
Tj=25°C
Tj=125°C
2000
1600
1200
800
400
0
0.0 1.0 2.0 3.0 4.0 5.0
Collector-Emitter voltage : VCE [V]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Tj=25°C, chip
10
8
6
4
Ic=2400A
2 Ic=1200A
Ic=600A
0
5 10 15 20 25
Gate-Emitter voltage : VGE [V]
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f=1MHz, Tj=25°C
1000
Cies
100
10 Cres
Coes
1
0 10 20 30
Collector-Emitter voltage : VCE[V]
Dynamic Gate charge (typ.)
Tj=25°C
1000
25
VCE
800
VGE
20
600 15
400 10
200 5
00
0 1000 2000 3000 4000 5000
Gate charge : Qg [nC]
2



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2MBI1200U4G-170
IGBT Modules
Switching time vs. Collector current (typ.)
Vcc=900V, VGE=±15V, Rgon=4.7Ω, Rgoff=1.2Ω, Tj=125°C
4.0
3.5 ton
3.0
2.5
2.0
tr
1.5
1.0 toff
0.5
0.0
0
tf
400
800
1200
1600
Collector current : Ic [A]
2000
Switching time vs. Gate resistance (typ.)
Vcc=900V, Ic=1200A, VGE=±15V, Tj=125°C
6.0
5.0 ton
4.0
3.0 toff
tr
2.0
1.0
tf
0.0
0 2 4 6 8 10 12 14
Gate resistance : Rg [Ω]
Switching loss vs. Collector current (typ.)
Vcc=900V, VGE=±15V, Rgon=4.7Ω, Rgoff=1.2Ω, Tj=125°C
1000
900
Eon
800
700 Eoff
600
500
400 Err
300
200
100
0
0 400 800 1200 1600 2000
Collector current : Ic [A], Forward current : IF [A]
2800
Reverse bias safe operating area (max.)
±VGE=15V, Tj=125°C/chip
2400
2000
1600
1200
800
400
0
0 400 800 1200 1600 2000
Collector-Emitter voltage : VCE [V]
3
1100
1000
900
800
700
600
500
400
300
200
100
0
0
Switching loss vs. Gate resistance (typ.)
Vcc=900V, Ic=1200A, VGE=±15V, Tj=125°C
Eon
Eoff
Err
2 4 6 8 10 12 14
Gate resistance : Rg [Ω]



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2MBI1200U4G-170
Forward current vs. Forward on voltage (typ.)
chip
2800
2400
Tj=25°C Tj=125°C
2000
1600
1200
800
400
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Forward on voltage : VF [V]
0.1000
0.0100
Transient thermal resistance (max.)
FWD
IGBT
0.0010
0.0001
0.001
0.010
0.100
Pulse width : Pw [sec]
1.000
IGBT Modules
Reverse recovery characteristics (typ.)
Vcc=900V, VGE=±15V, Rgon=4.7Ω, Tj=125°C
1200
1.2
1100
1000
1.1
Irr
1.0
900 0.9
800 0.8
700 0.7
600 0.6
500 trr 0.5
400 0.4
300 0.3
200 0.2
100 0.1
0 0.0
0 400 800 1200 1600 2000
Forward current : IF [A]
4



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