2MBI100VA-060-50 Datasheet PDF - Fuji Electric

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2MBI100VA-060-50
Fuji Electric

Part Number 2MBI100VA-060-50
Description IGBT Module
Page 6 Pages


2MBI100VA-060-50 datasheet pdf
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http://www.fujielectric.com/products/semiconductor/
2MBI100VA-060-50
IGBT MODULE (V series)
600V / 100A / 2 in one package
Features
High speed switching
Voltage drive
Low Inductance module structure
Applications
Inverter for Motor Drive
AC and DC Servo Drive Amplifier
Uninterruptible Power Supply
Industrial machines, such as Welding machines
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at TC=25°C unless otherwise specified)
Items
Symbols
Collector-Emitter voltage
VCES
Gate-Emitter voltage
VGES
IC
Collector current
IC pulse
-IC
-IC pulse
Collector power dissipation
PC
Junction temperature
Tj
Operating junction temperature (under switching conditions) Tjop
Case temperature
TC
Storage temperature
Tstg
Isolation voltage between terminal and copper base (*1) Viso
Screw torque
Mounting (*2)
Terminals (*3)
-
-
Conditions
Continuous
1ms
1ms
1 device
AC : 1min.
Note *1: All terminals should be connected together when isolation test will be done.
Note *2: Recommendable Value : 3.0-5.0 Nm (M5 or M6)
Note *3: Recommendable Value : 2.5-3.5 Nm (M5)
Electrical characteristics (at Tj= 25°C unless otherwise specified)
TC=100°C
Items
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Internal gate resistance
Input capacitance
Turn-on time
Turn-off time
Forward on voltage
Reverse recovery time
Thermal resistance characteristics
Symbols
ICES
IGES
VGE (th)
VCE (sat)
(terminal)
VCE (sat)
(chip)
RG (int)
Cies
ton
tr
tr (i)
toff
tf
VF
(terminal)
VF
(chip)
trr
Conditions
VGE = 0V, VCE = 600V
VCE = 0V, VGE = ±20V
VCE = 20V, IC = 100mA
VGE = 15V
IC = 100A
Tj=25°C
Tj=125°C
Tj=150°C
VGE = 15V
IC = 100A
Tj=25°C
Tj=125°C
Tj=150°C
-
VCE = 10V, VGE = 0V, f = 1MHz
VCC = 300V LS = 30nH
IC = 100A
VGE = ±15V
RG = 13Ω
Tj = 150°C
VGE = 0V
IF = 100A
Tj=25°C
Tj=125°C
Tj=150°C
VGE = 0V
IF = 100A
Tj=25°C
Tj=125°C
Tj=150°C
IF = 100A
Items
Symbols Conditions
Thermal resistance (1device)
Contact thermal resistance (1device) (*4)
Rth(j-c)
Rth(c-f)
IGBT
FWD
with Thermal Compound
Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound.
IGBT Modules
Maximum ratings
600
±20
100
200
100
200
650
175
150
125
-40 ~ 125
2500
5.0
5.0
Units
V
V
A
W
°C
VAC
Nm
Characteristics
min. typ. max.
- - 1.0
- - 200
6.2 6.7 7.2
- 1.70 2.15
- 2.00 -
2.20
- 1.60 2.05
- 1.90 -
2.10
-9-
- 6.4 -
- 650 -
- 300 -
- 100 -
- 600 -
- 40 -
- 1.65 2.10
- 1.55 -
1.52
- 1.60 2.05
- 1.50 -
1.47
- 200 -
Units
mA
nA
V
V
Ω
nF
nsec
V
nsec
Characteristics
min. typ. max.
- - 0.45
- - 0.80
- 0.050 -
Units
°C/W
1



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2MBI100VA-060-50
Characteristics (Representative)
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25°C / chip
250
VGE=20V 15V 12V
200
150
10V
100
50
0
0
8V
1234
Collector-Emitter voltage: VCE [V]
5
Collector current vs. Collector-Emitter voltage (typ.)
VGE= 15V / chip
250
Tj=25°C 125°C
200 150°C
150
100
50
0
0123
Collector-Emitter Voltage: VCE [V]
4
Gate Capacitance vs. Collector-Emitter Voltage
VGE= 0V, ƒ= 1MHz, Tj= 25°C
100
10 Cies
1 Cres
0.1
0
Coes
10 20
Collector-Emitter voltage: VCE [V]
30
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 150°C / chip
250
200
VGE= 20V 15V
12V
150
10V
100
50
0
0
8V
1234
Collector-Emitter voltage: VCE [V]
5
Collector-Emitter voltage vs. Gate-Emitter voltage
Tj= 25°C / chip
10
8
6
4
2 IC=200A
IC=100A
IC=50A
0
5 10 15 20 25
Gate-Emitter Voltage: VGE [V]
20
15
10
5
0
-5
-10
-15
-20
-1.5
Dynamic Gate Charge (typ.)
VCC=300V, IC=100A, Tj= 25°C
VCE
VGE
-0.5 0.5
Gate charge: Qg [μC]
400
300
200
100
0
-100
-200
-300
-400
1.5
2



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2MBI100VA-060-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Switching time vs. Collector current (typ.)
VCC=300V, VGE=±15V, RG=13Ω, Tj=125°C
10000
1000
toff
ton
tr
100
tf
10
0
100 200
Collector current: IC [A]
300
Switching time vs. Collector current (typ.)
VCC=300V, VGE=±15V, RG=13Ω, Tj=150°C
10000
1000
toff
ton
tr
100
tf
10
0
100 200
Collector current: IC [A]
300
Switching time vs. Gate resistance (typ.)
VCC=300V, IC=100A, VGE=±15V, Tj=125°C
10000
1000
toff
ton
tr
100
tf
10
1
10 100
Gate resistance: RG [Ω]
1000
Switching loss vs. Gate resistance (typ.)
VCC=300V, IC=100A, VGE=±15V, Tj=125, 150°C
70
Tj=125°C
60 Tj=150°C
Eon
50
40
30
20
10
0
1
Eoff
Err
10 100
Gate resistance: RG [Ω]
1000
3
Switching loss vs. Collector current (typ.)
VCC=300V, VGE=±15V, RG=13Ω, Tj=125, 150°C
16
14
12 Tj=125°C
10 Tj=150°C
8
Eon
Eoff
6
4
Err
2
0
0 50 100 150 200 250
Collector current: IC [A]
Reverse bias safe operating area (max.)
+VGE=15V, -VGE=15V, RG=13Ω, Tj=150°C
250
200
150
100
50
0
0 100 200 300 400 500 600 700 800
Collector-Emitter voltage: VCE [V]
(Main terminals)



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2MBI100VA-060-50
Forward Current vs. Forward Voltage (typ.)
chip
250
200
150
100
50
0
0
150°C
Tj=25°C
125°C
12
Forward on voltage: VF [V]
3
Reverse Recovery Characteristics (typ.)
VCC=300V, VGE=±15V, RG=13Ω, Tj=150°C
1000
100
trr
Irr
10
0
100 200 300
Forward current: IF [A]
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Reverse Recovery Characteristics (typ.)
VCC=300V, VGE=±15V, RG=13Ω, Tj=125°C
1000
100
trr
Irr
10
0
100 200
Forward current: IF [A]
300
Transient Thermal Resistance (max.)
1
FWD
IGBT
0.1
0.01
0.001
τ
Rth
[°C/W ]
[sec]
IGBT
FWD
0.0023
0.04827
0.08581
0.0301
0.12238
0.21756
0.0598
0.17288
0.30734
0.001
0.01
0.1
Pulse Width : Pw [sec]
0.0708
0.10648
0.18929
1
4



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